Comprehensive electro-optical analysis of long wavelength GaInNAs edge-emitting laser diode

M. S. Alias; S. M. Mitani; F. Maskuriy

doi:10.1016/j.ijleo.2011.07.029

Comprehensive electro-optical analysis of long wavelength GaInNAs edge-emitting laser diode

M. S. Alias^*, S. M. Mitani, F. Maskuriy

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Comprehensive analysis of GaInNAs edge-emitting laser operating near 1300 nm wavelength are made to underline the behavioural features of the proposed laser device, in view of the analytical investigation for various material and device electrical-optical parameters analysis such as band diagram, material gain, quantum well emission wavelength, optical wave and mode profiles, light-current-voltage characteristic, output mode spectrum, current distribution and far-field profile. The material analysis indicates that a high quality GaInNAs active region is designed, where high material gain and photoluminescence wavelength near 1.3 μm are achieved. The device obtains low threshold current operation with lasing emission around 1.285 μm.

Original language	English (US)
Pages (from-to)	1051-1055
Number of pages	5
Journal	Optik
Volume	123
Issue number	12
DOIs	https://doi.org/10.1016/j.ijleo.2011.07.029
State	Published - Jun 2012
Externally published	Yes

Keywords

Edge emitting laser
GaInNAs
Semiconductor laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.ijleo.2011.07.029

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@article{4904f3fbe7774553950afd65eb729e3b,

title = "Comprehensive electro-optical analysis of long wavelength GaInNAs edge-emitting laser diode",

abstract = "Comprehensive analysis of GaInNAs edge-emitting laser operating near 1300 nm wavelength are made to underline the behavioural features of the proposed laser device, in view of the analytical investigation for various material and device electrical-optical parameters analysis such as band diagram, material gain, quantum well emission wavelength, optical wave and mode profiles, light-current-voltage characteristic, output mode spectrum, current distribution and far-field profile. The material analysis indicates that a high quality GaInNAs active region is designed, where high material gain and photoluminescence wavelength near 1.3 μm are achieved. The device obtains low threshold current operation with lasing emission around 1.285 μm.",

keywords = "Edge emitting laser, GaInNAs, Semiconductor laser",

author = "Alias, {M. S.} and Mitani, {S. M.} and F. Maskuriy",

year = "2012",

month = jun,

doi = "10.1016/j.ijleo.2011.07.029",

language = "English (US)",

volume = "123",

pages = "1051--1055",

journal = "Optik",

issn = "0030-4026",

publisher = "Elsevier",

number = "12",

}

TY - JOUR

T1 - Comprehensive electro-optical analysis of long wavelength GaInNAs edge-emitting laser diode

AU - Alias, M. S.

AU - Mitani, S. M.

AU - Maskuriy, F.

PY - 2012/6

Y1 - 2012/6

N2 - Comprehensive analysis of GaInNAs edge-emitting laser operating near 1300 nm wavelength are made to underline the behavioural features of the proposed laser device, in view of the analytical investigation for various material and device electrical-optical parameters analysis such as band diagram, material gain, quantum well emission wavelength, optical wave and mode profiles, light-current-voltage characteristic, output mode spectrum, current distribution and far-field profile. The material analysis indicates that a high quality GaInNAs active region is designed, where high material gain and photoluminescence wavelength near 1.3 μm are achieved. The device obtains low threshold current operation with lasing emission around 1.285 μm.

AB - Comprehensive analysis of GaInNAs edge-emitting laser operating near 1300 nm wavelength are made to underline the behavioural features of the proposed laser device, in view of the analytical investigation for various material and device electrical-optical parameters analysis such as band diagram, material gain, quantum well emission wavelength, optical wave and mode profiles, light-current-voltage characteristic, output mode spectrum, current distribution and far-field profile. The material analysis indicates that a high quality GaInNAs active region is designed, where high material gain and photoluminescence wavelength near 1.3 μm are achieved. The device obtains low threshold current operation with lasing emission around 1.285 μm.

KW - Edge emitting laser

KW - GaInNAs

KW - Semiconductor laser

UR - http://www.scopus.com/inward/record.url?scp=84861097656&partnerID=8YFLogxK

U2 - 10.1016/j.ijleo.2011.07.029

DO - 10.1016/j.ijleo.2011.07.029

M3 - Article

AN - SCOPUS:84861097656

SN - 0030-4026

VL - 123

SP - 1051

EP - 1055

JO - Optik

JF - Optik

IS - 12

ER -

Comprehensive electro-optical analysis of long wavelength GaInNAs edge-emitting laser diode

Abstract

Keywords

ASJC Scopus subject areas

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