Comprehensive uniformity analysis of gaAs-based VCSEL epiwafer by utilizing the on-wafer test capability

Mohd Sharizal Alias; Sahbudin Shaari; P. K. Choudhury; Sufian Mitani

doi:10.1007/s10946-009-9082-1

Comprehensive uniformity analysis of gaAs-based VCSEL epiwafer by utilizing the on-wafer test capability

Mohd Sharizal Alias, Sahbudin Shaari, P. K. Choudhury, Sufian Mitani

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A comprehensive study of the uniformity of 850 nm VCSEL epiwafer grown by the MOCVD technique is presented. By utilizing the VCSEL planar structure, uniformity test is performed on-wafer directly, besides using the conventional photoluminescence technique. The VCSEL quantum wells are found to exhibit a peak emission wavelength of 839.5 nm. Also, the grown epiwafer is observed to exhibit a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show a similar trend towards the light-current and output spectral characteristics. However, the device existing near the epiwafer edge is observed to exhibit significantly different characteristics, which is attributed to the physical conditions of the device near the edge, and also the limitations of the epitaxial growth.

Original language	English (US)
Pages (from-to)	368-375
Number of pages	8
Journal	Journal of Russian Laser Research
Volume	30
Issue number	4
DOIs	https://doi.org/10.1007/s10946-009-9082-1
State	Published - Oct 2009
Externally published	Yes

Keywords

III-V compounds
Optoelectronic devices
Quantum-well devices
VCSELS

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)

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10.1007/s10946-009-9082-1

Cite this

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title = "Comprehensive uniformity analysis of gaAs-based VCSEL epiwafer by utilizing the on-wafer test capability",

abstract = "A comprehensive study of the uniformity of 850 nm VCSEL epiwafer grown by the MOCVD technique is presented. By utilizing the VCSEL planar structure, uniformity test is performed on-wafer directly, besides using the conventional photoluminescence technique. The VCSEL quantum wells are found to exhibit a peak emission wavelength of 839.5 nm. Also, the grown epiwafer is observed to exhibit a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show a similar trend towards the light-current and output spectral characteristics. However, the device existing near the epiwafer edge is observed to exhibit significantly different characteristics, which is attributed to the physical conditions of the device near the edge, and also the limitations of the epitaxial growth.",

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author = "Alias, {Mohd Sharizal} and Sahbudin Shaari and Choudhury, {P. K.} and Sufian Mitani",

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AU - Alias, Mohd Sharizal

AU - Shaari, Sahbudin

AU - Choudhury, P. K.

AU - Mitani, Sufian

PY - 2009/10

Y1 - 2009/10

N2 - A comprehensive study of the uniformity of 850 nm VCSEL epiwafer grown by the MOCVD technique is presented. By utilizing the VCSEL planar structure, uniformity test is performed on-wafer directly, besides using the conventional photoluminescence technique. The VCSEL quantum wells are found to exhibit a peak emission wavelength of 839.5 nm. Also, the grown epiwafer is observed to exhibit a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show a similar trend towards the light-current and output spectral characteristics. However, the device existing near the epiwafer edge is observed to exhibit significantly different characteristics, which is attributed to the physical conditions of the device near the edge, and also the limitations of the epitaxial growth.

AB - A comprehensive study of the uniformity of 850 nm VCSEL epiwafer grown by the MOCVD technique is presented. By utilizing the VCSEL planar structure, uniformity test is performed on-wafer directly, besides using the conventional photoluminescence technique. The VCSEL quantum wells are found to exhibit a peak emission wavelength of 839.5 nm. Also, the grown epiwafer is observed to exhibit a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show a similar trend towards the light-current and output spectral characteristics. However, the device existing near the epiwafer edge is observed to exhibit significantly different characteristics, which is attributed to the physical conditions of the device near the edge, and also the limitations of the epitaxial growth.

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KW - Optoelectronic devices

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KW - VCSELS

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Comprehensive uniformity analysis of gaAs-based VCSEL epiwafer by utilizing the on-wafer test capability

Abstract

Keywords

ASJC Scopus subject areas

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