Concurrent nonvolatile resistance and capacitance switching in LaAlO 3

S. X. Wu; H. Y. Peng; T. Wu

doi:10.1063/1.3560257

Concurrent nonvolatile resistance and capacitance switching in LaAlO ₃

S. X. Wu, H. Y. Peng, T. Wu

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO₃ /Nb: SrTiO₃ heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance state while a forward bias drives it into a high resistance and low capacitance state. Our experiments suggest that both the formation of conducting filaments and the modulation of interface barrier contribute to the resistance switching. Oxygen vacancies play critical roles in determining the switching characteristics and can be controlled in the process of device fabrication.

Original language	English (US)
Article number	093503
Journal	Applied Physics Letters
Volume	98
Issue number	9
DOIs	https://doi.org/10.1063/1.3560257
State	Published - Feb 28 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3560257

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title = "Concurrent nonvolatile resistance and capacitance switching in LaAlO 3",

abstract = "We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3 /Nb: SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance state while a forward bias drives it into a high resistance and low capacitance state. Our experiments suggest that both the formation of conducting filaments and the modulation of interface barrier contribute to the resistance switching. Oxygen vacancies play critical roles in determining the switching characteristics and can be controlled in the process of device fabrication.",

author = "Wu, {S. X.} and Peng, {H. Y.} and T. Wu",

note = "Funding Information: We acknowledge the support of Singapore National Research Foundation (Grant No. NRF-G-CRP 2007-1)",

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AU - Wu, S. X.

AU - Peng, H. Y.

AU - Wu, T.

N1 - Funding Information: We acknowledge the support of Singapore National Research Foundation (Grant No. NRF-G-CRP 2007-1)

PY - 2011/2/28

Y1 - 2011/2/28

N2 - We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3 /Nb: SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance state while a forward bias drives it into a high resistance and low capacitance state. Our experiments suggest that both the formation of conducting filaments and the modulation of interface barrier contribute to the resistance switching. Oxygen vacancies play critical roles in determining the switching characteristics and can be controlled in the process of device fabrication.

AB - We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3 /Nb: SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance state while a forward bias drives it into a high resistance and low capacitance state. Our experiments suggest that both the formation of conducting filaments and the modulation of interface barrier contribute to the resistance switching. Oxygen vacancies play critical roles in determining the switching characteristics and can be controlled in the process of device fabrication.

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Concurrent nonvolatile resistance and capacitance switching in LaAlO ₃

Abstract

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