Conductance quantization in h-BN memristors

Memristive devices made of multilayer hexagonal boron nitride are attracting much attention for information storage, computation, encryption, and communication. Generating multilevel operation in these memristors would be an important added value for the field of neuromorphic computation, but the main phenomenon producing it (i.e., conductance quantization) is not well understood for this material. Here, we analyze hexagonal boron nitride memristive devices with metal electrodes operating in their quasistatic and transient regimes. Conductance quantization effects were observed both in I-V curves measured under ramped voltage stress and in the reset processes driven by voltage pulse trains. Polar and time lag plots are employed to shed light on the physics behind the device resistive switching. A model is proposed to reproduce the electrical characteristics of progressive reset processes and the discretization of the device conductance linked to quantum effects.