Conductivity and charge trapping after electrical stress in amorphous and polycrystalline Al2O3Based Devices Studied With AFM-Related Techniques

Mario Lanza; Marc Porti; Montserrat Nafra; Xavier Aymerich; Gnther Benstetter; Edgar Lodermeier; Heiko Ranzinger; Gert Jaschke; Steffen Teichert; Lutz Wilde; Pawel Piotr Michalowski

doi:10.1109/TNANO.2010.2041935

Conductivity and charge trapping after electrical stress in amorphous and polycrystalline Al2O3Based Devices Studied With AFM-Related Techniques

Mario Lanza, Marc Porti, Montserrat Nafra, Xavier Aymerich, Gnther Benstetter, Edgar Lodermeier, Heiko Ranzinger, Gert Jaschke, Steffen Teichert, Lutz Wilde, Pawel Piotr Michalowski

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al 2O3 stacks for flash memories on the annealing temperature (TA). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on TA. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks. © 2006 IEEE.

Original language	English (US)
Pages (from-to)	344-351
Number of pages	8
Journal	IEEE Transactions on Nanotechnology
Volume	10
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2010.2041935
State	Published - Mar 1 2011
Externally published	Yes

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2010.2041935

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Lanza, M., Porti, M., Nafra, M., Aymerich, X., Benstetter, G., Lodermeier, E., Ranzinger, H., Jaschke, G., Teichert, S., Wilde, L., & Michalowski, P. P. (2011). Conductivity and charge trapping after electrical stress in amorphous and polycrystalline Al2O3Based Devices Studied With AFM-Related Techniques. IEEE Transactions on Nanotechnology, 10(2), 344-351. https://doi.org/10.1109/TNANO.2010.2041935

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abstract = "In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al 2O3 stacks for flash memories on the annealing temperature (TA). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on TA. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks. {\textcopyright} 2006 IEEE.",

author = "Mario Lanza and Marc Porti and Montserrat Nafra and Xavier Aymerich and Gnther Benstetter and Edgar Lodermeier and Heiko Ranzinger and Gert Jaschke and Steffen Teichert and Lutz Wilde and Michalowski, {Pawel Piotr}",

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Lanza, M, Porti, M, Nafra, M, Aymerich, X, Benstetter, G, Lodermeier, E, Ranzinger, H, Jaschke, G, Teichert, S, Wilde, L & Michalowski, PP 2011, 'Conductivity and charge trapping after electrical stress in amorphous and polycrystalline Al2O3Based Devices Studied With AFM-Related Techniques', IEEE Transactions on Nanotechnology, vol. 10, no. 2, pp. 344-351. https://doi.org/10.1109/TNANO.2010.2041935

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T1 - Conductivity and charge trapping after electrical stress in amorphous and polycrystalline Al2O3Based Devices Studied With AFM-Related Techniques

AU - Lanza, Mario

AU - Porti, Marc

AU - Nafra, Montserrat

AU - Aymerich, Xavier

AU - Benstetter, Gnther

AU - Lodermeier, Edgar

AU - Ranzinger, Heiko

AU - Jaschke, Gert

AU - Teichert, Steffen

AU - Wilde, Lutz

AU - Michalowski, Pawel Piotr

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AB - In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al 2O3 stacks for flash memories on the annealing temperature (TA). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on TA. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks. © 2006 IEEE.

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DO - 10.1109/TNANO.2010.2041935

M3 - Article

SN - 1536-125X

VL - 10

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JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 2

ER -

Conductivity and charge trapping after electrical stress in amorphous and polycrystalline Al2O3Based Devices Studied With AFM-Related Techniques

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