TY - JOUR
T1 - Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices
AU - Wang, Hong
AU - Du, Yuanmin
AU - Li, Yingtao
AU - Zhu, Bowen
AU - Leow, Wan Ru
AU - Li, Yuangang
AU - Pan, Jisheng
AU - Wu, Tao
AU - Chen, Xiaodong
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2015/5/13
Y1 - 2015/5/13
N2 - The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials. Resistive switching (RS) devices with configurable functionality based on protein are successfully achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials. Resistive switching (RS) devices with configurable functionality based on protein are successfully achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - http://hdl.handle.net/10754/566089
UR - http://doi.wiley.com/10.1002/adfm.201501389
UR - http://www.scopus.com/inward/record.url?scp=84929438739&partnerID=8YFLogxK
U2 - 10.1002/adfm.201501389
DO - 10.1002/adfm.201501389
M3 - Article
SN - 1616-301X
VL - 25
SP - 3825
EP - 3831
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 25
ER -