Abstract
In this article, we review current research activities in contact material development for electronic and nanoelectronic devices. A fundamental issue in contact materials research is to understand and control interfacial reactions and phenomena that modify the expected device performance. These reactions have become more challenging and more difficult to control as new materials have been introduced and as device sizes have entered the deep nanoscale. To provide an overview of this field of inquiry, this issue of MRS Bulletin includes articles on gate and contact materials for Si-based devices, junction contact materials for Si-based devices, and contact materials for alternate channel substrates (Ge and III-V), nanodevices. © 2011 Materials Research Society.
Original language | English (US) |
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Pages (from-to) | 90-94 |
Number of pages | 5 |
Journal | MRS Bulletin |
Volume | 36 |
Issue number | 2 |
DOIs | |
State | Published - Feb 18 2011 |
ASJC Scopus subject areas
- General Materials Science
- Physical and Theoretical Chemistry
- Condensed Matter Physics