Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding

J. J. Ke; K. T. Tsai; Y. A. Dai; J. H. He

doi:10.1063/1.3680251

Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding

J. J. Ke^*, K. T. Tsai, Y. A. Dai, J. H. He

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 10 ^-6 ω-cm ² has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing accurate estimation of electron concentration, electron mobility, effective barrier height, and ideality factor. This study can be the guidance to correct measurement and understanding of the contact transport, which is useful for NWs device design and fabrication.

Original language	English (US)
Article number	053503
Journal	Applied Physics Letters
Volume	100
Issue number	5
DOIs	https://doi.org/10.1063/1.3680251
State	Published - Jan 30 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3680251

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@article{2222c4d6fd0d4cf182040f15c66e6f9d,

title = "Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding",

abstract = "The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 10 -6 ω-cm 2 has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing accurate estimation of electron concentration, electron mobility, effective barrier height, and ideality factor. This study can be the guidance to correct measurement and understanding of the contact transport, which is useful for NWs device design and fabrication.",

author = "Ke, {J. J.} and Tsai, {K. T.} and Dai, {Y. A.} and He, {J. H.}",

year = "2012",

month = jan,

day = "30",

doi = "10.1063/1.3680251",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "5",

}

TY - JOUR

T1 - Contact transport of focused ion beam-deposited Pt to Si nanowires

T2 - From measurement to understanding

AU - Ke, J. J.

AU - Tsai, K. T.

AU - Dai, Y. A.

AU - He, J. H.

PY - 2012/1/30

Y1 - 2012/1/30

N2 - The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 10 -6 ω-cm 2 has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing accurate estimation of electron concentration, electron mobility, effective barrier height, and ideality factor. This study can be the guidance to correct measurement and understanding of the contact transport, which is useful for NWs device design and fabrication.

AB - The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 10 -6 ω-cm 2 has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing accurate estimation of electron concentration, electron mobility, effective barrier height, and ideality factor. This study can be the guidance to correct measurement and understanding of the contact transport, which is useful for NWs device design and fabrication.

UR - http://www.scopus.com/inward/record.url?scp=84857000699&partnerID=8YFLogxK

U2 - 10.1063/1.3680251

DO - 10.1063/1.3680251

M3 - Article

AN - SCOPUS:84857000699

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053503

ER -

Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding

Abstract

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