TY - JOUR
T1 - Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture
AU - Megalini, Ludovico
AU - Becerra, Daniel L.
AU - Farrell, Robert M.
AU - Pourhashemi, A.
AU - Speck, James S.
AU - Nakamura, Shuji
AU - DenBaars, Steven P.
AU - Cohen, Daniel A.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the Solid State Lighting and Energy Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2015/3/6
Y1 - 2015/3/6
N2 - © 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm$^{2}$, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.
AB - © 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm$^{2}$, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.
UR - http://hdl.handle.net/10754/597852
UR - https://iopscience.iop.org/article/10.7567/APEX.8.042701
UR - http://www.scopus.com/inward/record.url?scp=84927929513&partnerID=8YFLogxK
U2 - 10.7567/APEX.8.042701
DO - 10.7567/APEX.8.042701
M3 - Article
SN - 1882-0778
VL - 8
SP - 042701
JO - Applied Physics Express
JF - Applied Physics Express
IS - 4
ER -