Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method

Motoaki Iwaya, Taiji Yamamoto, Daiki Tanaka, Daisuke Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki

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Engineering

Material Science

Physics

Agricultural and Biological Sciences