TY - JOUR
T1 - Control of stress and crystalline quality in GaInN films used for green emitters
AU - Iwaya, Motoaki
AU - Miura, Aya
AU - Senda, Ryota
AU - Nagai, Tetsuya
AU - Kawashima, Takeshi
AU - Iida, Daisuke
AU - Kamiyama, Satoshi
AU - Amano, Hiroshi
AU - Akasaki, Isamu
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2008/11/15
Y1 - 2008/11/15
N2 - We succeeded in growing almost completely relaxed, high-quality, thick GaInN films on an m-plane GaN template with grooves along the 〈0 0 0 1〉 direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GaInN film with a threading dislocation density of approximately 1×108 cm-2 was confirmed. © 2008 Elsevier B.V. All rights reserved.
AB - We succeeded in growing almost completely relaxed, high-quality, thick GaInN films on an m-plane GaN template with grooves along the 〈0 0 0 1〉 direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GaInN film with a threading dislocation density of approximately 1×108 cm-2 was confirmed. © 2008 Elsevier B.V. All rights reserved.
UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024808007458
UR - http://www.scopus.com/inward/record.url?scp=56249085541&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2008.08.038
DO - 10.1016/j.jcrysgro.2008.08.038
M3 - Article
SN - 0022-0248
VL - 310
SP - 4920
EP - 4922
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 23
ER -