TY - GEN
T1 - Controlling dynamic pull-in escape in electrostatic MEMS
AU - Saleem, Fadi Al
AU - Younis, Mohammad
PY - 2009
Y1 - 2009
N2 - In this work, we present modeling and experimental data for controlling the dynamic pull-in and the escape-from-potential-well phenomena for a capacitive MEMS device using phase control technique. The device is actuated with a DC voltage superimposed to an AC harmonic voltage. An inevitable escape band of frequencies, where a MEMS resonator is forced to pull-in, is simulated theoretically and found experimentally. To enhance the stability of the MEMS device, a second weak AC signal with a specific phase shift is superimposed to the original AC excitation to be used as the control signal. It is found that this type of control signal can effectively shrink the escape tongue near the primary resonance of the capacitive device, thereby enhancing its stability. A numerical scheme (shooting technique) for finding periodic motion and investigating its stability using Floquet theory is used to simulate the device behavior. Comparison is then made between the simulation results and the obtained experimental data.
AB - In this work, we present modeling and experimental data for controlling the dynamic pull-in and the escape-from-potential-well phenomena for a capacitive MEMS device using phase control technique. The device is actuated with a DC voltage superimposed to an AC harmonic voltage. An inevitable escape band of frequencies, where a MEMS resonator is forced to pull-in, is simulated theoretically and found experimentally. To enhance the stability of the MEMS device, a second weak AC signal with a specific phase shift is superimposed to the original AC excitation to be used as the control signal. It is found that this type of control signal can effectively shrink the escape tongue near the primary resonance of the capacitive device, thereby enhancing its stability. A numerical scheme (shooting technique) for finding periodic motion and investigating its stability using Floquet theory is used to simulate the device behavior. Comparison is then made between the simulation results and the obtained experimental data.
UR - http://www.scopus.com/inward/record.url?scp=70449657477&partnerID=8YFLogxK
U2 - 10.1109/ISMA.2009.5164813
DO - 10.1109/ISMA.2009.5164813
M3 - Conference contribution
AN - SCOPUS:70449657477
SN - 9781424434817
T3 - 2009 6th International Symposium on Mechatronics and its Applications, ISMA 2009
BT - 2009 6th International Symposium on Mechatronics and its Applications, ISMA 2009
T2 - 2009 6th International Symposium on Mechatronics and its Applications, ISMA 2009
Y2 - 23 March 2009 through 26 March 2009
ER -