TY - JOUR
T1 - Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature
AU - Do, Quyen
AU - Manh, Nguyen The
AU - Triet, Luong Nguyen Dai
AU - Choi, Yura
AU - Lee, Young Woo
AU - Cho, Yonghyun
AU - Lee, Kwangjae
AU - Cho, Namchul
N1 - KAUST Repository Item: Exported on 2020-12-25
Acknowledgements: This work was supported by the Soonchunhyang University Research Fund (No.20170810). This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea under Grant No. 20184030202130.
PY - 2020/12/18
Y1 - 2020/12/18
N2 - We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.
AB - We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.
UR - http://hdl.handle.net/10754/666645
UR - https://www.tandfonline.com/doi/full/10.1080/15421406.2020.1743464
UR - http://www.scopus.com/inward/record.url?scp=85097732141&partnerID=8YFLogxK
U2 - 10.1080/15421406.2020.1743464
DO - 10.1080/15421406.2020.1743464
M3 - Article
SN - 1563-5287
VL - 707
SP - 126
EP - 139
JO - Molecular Crystals and Liquid Crystals
JF - Molecular Crystals and Liquid Crystals
IS - 1
ER -