Correction: Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: Reduced interfacial transfer resistance and improved stability to hydrogen (Journal of Materials Chemistry A (2018) 6 (6922-6930) DOI: 10.1039/C7TA11338B)

The authors regret an error in the ABPE calculation, arising from the conversion from Ag/AgCl potential to RHE. This does not affect the main claims and arguments in the article. The corrected text, on page 6927 of the originating article, should read as follows: "The InGaN NWs grown on Ti achieved an ABPE of 0.23% at 0.5 V vs. RHE compared to only 0.01% at 0.86 V vs. RHE for those grown on the Si-substrate. Hence, an approximately 23 times increase in power conversion efficiency was achieved by using metallic Ti as a charge extraction/collection interlayer." The corrected version of Fig. 4 is shown below (Fig. 4(b) has been corrected; the other panels remain unchanged): (Figure Presented) The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.