Coulomb blockade effect simulation to the electrical characteristic of silicon based single electron transistor

Mohamad Insan Nugraha*, Yudi Darma

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

    1 Scopus citations

    Abstract

    In this paper, we simulate the effect of interaction between electrons on the electrical characteristic of silicon based single electron transistor (SET). The interaction between electrons is defined in the term of Coulomb blockade effect. These electrical characteristics involve conductance and I-V characteristic in SET structure. The simulation results show that when Coulomb blockade effect is included, the characteristic of I-V and conductance in SET shift to right. In addition, by reducing the quantum dot size, Coulomb blockade effect contributes greater effect. These results are shown in the characteristic of I-V and conductance which shift greater to the right in smaller quantum dot.

    Original languageEnglish (US)
    Title of host publicationAIP Conference Proceedings
    Pages211-214
    Number of pages4
    Edition1
    DOIs
    StatePublished - Nov 2011

    Publication series

    NameAIP Conference Proceedings
    Number1
    Volume1454
    ISSN (Print)0094-243X
    ISSN (Electronic)1551-7616

    Keywords

    • Conductance
    • Energy level
    • I-V characteristic
    • Quantum dot
    • Single electron transistor

    ASJC Scopus subject areas

    • General Physics and Astronomy

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