Cr-doped III-V nitrides: Potential candidates for spintronics

Bin Amin; Suneela K. Arif; Iftikhar Ahmad; Muhammad Maqbool; Roshan Ahmad; Souraya Goumri-Said; Keith A. Prisbrey

doi:10.1007/s11664-011-1539-7

Cr-doped III-V nitrides: Potential candidates for spintronics

Bin Amin, Suneela K. Arif, Iftikhar Ahmad, Muhammad Maqbool, Roshan Ahmad, Souraya Goumri-Said, Keith A. Prisbrey

Physical Sciences and Engineering

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Abstract

Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

Original language	English (US)
Pages (from-to)	1428-1436
Number of pages	9
Journal	Journal of Electronic Materials
Volume	40
Issue number	6
DOIs	https://doi.org/10.1007/s11664-011-1539-7
State	Published - Feb 19 2011

ASJC Scopus subject areas

Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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@article{86a8b6d0ce0440c2bae19896462c42d7,

title = "Cr-doped III-V nitrides: Potential candidates for spintronics",

abstract = "Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. {\textcopyright} 2011 TMS.",

author = "Bin Amin and Arif, {Suneela K.} and Iftikhar Ahmad and Muhammad Maqbool and Roshan Ahmad and Souraya Goumri-Said and Prisbrey, {Keith A.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2011",

month = feb,

day = "19",

doi = "10.1007/s11664-011-1539-7",

language = "English (US)",

volume = "40",

pages = "1428--1436",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer Verlag",

number = "6",

}

TY - JOUR

T1 - Cr-doped III-V nitrides: Potential candidates for spintronics

AU - Amin, Bin

AU - Arif, Suneela K.

AU - Ahmad, Iftikhar

AU - Maqbool, Muhammad

AU - Ahmad, Roshan

AU - Goumri-Said, Souraya

AU - Prisbrey, Keith A.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2011/2/19

Y1 - 2011/2/19

N2 - Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

AB - Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

UR - http://hdl.handle.net/10754/561717

UR - http://arxiv.org/abs/arXiv:1101.4059v1

UR - http://www.scopus.com/inward/record.url?scp=79955903035&partnerID=8YFLogxK

U2 - 10.1007/s11664-011-1539-7

DO - 10.1007/s11664-011-1539-7

M3 - Article

SN - 0361-5235

VL - 40

SP - 1428

EP - 1436

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -

Cr-doped III-V nitrides: Potential candidates for spintronics

Abstract

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