Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET

C. D. Young; M. O. Baykan; A. Agrawal; H. Madan; K. Akarvardar; C. Hobbs; I. Ok; W. Taylor; Casey Smith; M. M. Hussain; T. Nishida; S. Thompson; P. Majhi; P. Kirsch; S. Datta; R. Jammy

Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET

C. D. Young^*, M. O. Baykan, A. Agrawal, H. Madan, K. Akarvardar, C. Hobbs, I. Ok, W. Taylor, Casey Smith, M. M. Hussain, T. Nishida, S. Thompson, P. Majhi, P. Kirsch, S. Datta, R. Jammy

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

26 Scopus citations

Abstract

Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.

Original language	English (US)
Title of host publication	2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages	18-19
Number of pages	2
State	Published - 2011
Event	2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan Duration: Jun 14 2011 → Jun 16 2011

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2011 Symposium on VLSI Technology, VLSIT 2011
Country/Territory	Japan
City	Kyoto
Period	06/14/11 → 06/16/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Young, C. D., Baykan, M. O., Agrawal, A., Madan, H., Akarvardar, K., Hobbs, C., Ok, I., Taylor, W., Smith, C., Hussain, M. M., Nishida, T., Thompson, S., Majhi, P., Kirsch, P., Datta, S., & Jammy, R. (2011). Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET. In 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers (pp. 18-19). Article 5984612 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{873273146b8e4a2d86b25972f719197a,

title = "Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET",

abstract = "Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.",

author = "Young, {C. D.} and Baykan, {M. O.} and A. Agrawal and H. Madan and K. Akarvardar and C. Hobbs and I. Ok and W. Taylor and Casey Smith and Hussain, {M. M.} and T. Nishida and S. Thompson and P. Majhi and P. Kirsch and S. Datta and R. Jammy",

year = "2011",

language = "English (US)",

isbn = "9784863481640",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "18--19",

booktitle = "2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers",

note = "2011 Symposium on VLSI Technology, VLSIT 2011 ; Conference date: 14-06-2011 Through 16-06-2011",

}

Young, CD, Baykan, MO, Agrawal, A, Madan, H, Akarvardar, K, Hobbs, C, Ok, I, Taylor, W, Smith, C, Hussain, MM, Nishida, T, Thompson, S, Majhi, P, Kirsch, P, Datta, S & Jammy, R 2011, Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET. in 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers., 5984612, Digest of Technical Papers - Symposium on VLSI Technology, pp. 18-19, 2011 Symposium on VLSI Technology, VLSIT 2011, Kyoto, Japan, 06/14/11.

Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET. / Young, C. D.; Baykan, M. O.; Agrawal, A. et al.
2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers. 2011. p. 18-19 5984612 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Critical discussion on (100) and (110) orientation dependent transport

T2 - 2011 Symposium on VLSI Technology, VLSIT 2011

AU - Young, C. D.

AU - Baykan, M. O.

AU - Agrawal, A.

AU - Madan, H.

AU - Akarvardar, K.

AU - Hobbs, C.

AU - Ok, I.

AU - Taylor, W.

AU - Smith, Casey

AU - Hussain, M. M.

AU - Nishida, T.

AU - Thompson, S.

AU - Majhi, P.

AU - Kirsch, P.

AU - Datta, S.

AU - Jammy, R.

PY - 2011

Y1 - 2011

N2 - Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.

AB - Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.

UR - http://www.scopus.com/inward/record.url?scp=80052679969&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:80052679969

SN - 9784863481640

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 18

EP - 19

BT - 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers

Y2 - 14 June 2011 through 16 June 2011

ER -

Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET

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