TY - JOUR
T1 - Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
AU - Rota, Michele B.
AU - Ameruddin, Amira S.
AU - Wong-Leung, Jennifer
AU - Belabbes, Abderrezak
AU - Gao, Qiang
AU - Miriametro, Antonio
AU - Mura, Francesco
AU - Tan, Hark Hoe
AU - Polimeni, Antonio
AU - Bechstedt, Friedhelm
AU - Jagadish, Chennupati
AU - Capizzi, Mario
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: A.P. acknowledges funding by Sapienza University di Roma under "Ateneo Awards 2015" Grant. The Australian authors acknowledge the Australian Research Council for financial support and Australian National Fabrication Facility and Australian Microscopy and Microanalysis Research Facility for providing access to some of the equipment used in this work. Dr. Aruni Fonseka is acknowledged for fruitful discussion.
PY - 2017/7/21
Y1 - 2017/7/21
N2 - One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.
AB - One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.
UR - http://hdl.handle.net/10754/625989
UR - http://pubs.acs.org/doi/abs/10.1021/acs.jpcc.7b05482
UR - http://www.scopus.com/inward/record.url?scp=85026874052&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.7b05482
DO - 10.1021/acs.jpcc.7b05482
M3 - Article
AN - SCOPUS:85026874052
SN - 1932-7447
VL - 121
SP - 16650
EP - 16656
JO - The Journal of Physical Chemistry C
JF - The Journal of Physical Chemistry C
IS - 30
ER -