@article{da18c09ea7ce42f5837eb921d77bac90,
title = "Cryogenic microwave imaging of metal–insulator transition in doped silicon",
abstract = "We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases. {\textcopyright} 2011 American Institute of Physics.",
author = "Worasom Kundhikanjana and Keji Lai and Kelly, {Michael A.} and Zhi-Xun Shen",
note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-F1-033-02 Acknowledgements: This research is funded by Center of Probing the Nanoscale (CPN), Stanford University, National Science Foundation (NSF) Gran No. DMR-0906027, and (U.S.) Department of Energy (DOE) Contract No. DE-FG03-01ER45929-A011 for low temperature cryostat. This publication is also based on work supported by Award No. KUS-F1-033-02, made by King Abdullah University of Science and Technology (KAUST) under the global research partnership (GRP) program. CPN is an NSF NSEC,National Science Foundation (NSF) Grant No. PHY-0425897. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",
year = "2011",
month = mar,
day = "4",
doi = "10.1063/1.3554438",
language = "English (US)",
volume = "82",
pages = "033705",
journal = "Review of Scientific Instruments",
issn = "0034-6748",
publisher = "AIP Publishing",
number = "3",
}