Cryogenic microwave imaging of metal–insulator transition in doped silicon

Worasom Kundhikanjana, Keji Lai, Michael A. Kelly, Zhi-Xun Shen

Research output: Contribution to journalArticlepeer-review

44 Scopus citations


We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases. © 2011 American Institute of Physics.
Original languageEnglish (US)
Pages (from-to)033705
JournalReview of Scientific Instruments
Issue number3
StatePublished - Mar 4 2011
Externally publishedYes


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