Crystal growth and equilibrium crystal shapes of silicon in the melt

Xinbo Yang; K. Fujiwara; K. Maeda; J. Nozawa; H. Koizumi; S. Uda

doi:10.1002/pip.2290

Crystal growth and equilibrium crystal shapes of silicon in the melt

Xinbo Yang^*, K. Fujiwara, K. Maeda, J. Nozawa, H. Koizumi, S. Uda

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.

Original language	English (US)
Pages (from-to)	574-580
Number of pages	7
Journal	Progress in Photovoltaics: Research and Applications
Volume	22
Issue number	5
DOIs	https://doi.org/10.1002/pip.2290
State	Published - May 1 2014
Externally published	Yes

Keywords

crystal growth shape
equilibrium crystal shape
silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pip.2290

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@article{4a3db464e8dc4af5bf593e11da799d27,

title = "Crystal growth and equilibrium crystal shapes of silicon in the melt",

abstract = "The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.",

keywords = "crystal growth shape, equilibrium crystal shape, silicon",

author = "Xinbo Yang and K. Fujiwara and K. Maeda and J. Nozawa and H. Koizumi and S. Uda",

note = "Publisher Copyright: {\textcopyright} 2012 John Wiley & Sons, Ltd.",

year = "2014",

month = may,

day = "1",

doi = "10.1002/pip.2290",

language = "English (US)",

volume = "22",

pages = "574--580",

journal = "Progress in Photovoltaics: Research and Applications",

issn = "1062-7995",

publisher = "John Wiley and Sons Ltd",

number = "5",

}

TY - JOUR

T1 - Crystal growth and equilibrium crystal shapes of silicon in the melt

AU - Yang, Xinbo

AU - Fujiwara, K.

AU - Maeda, K.

AU - Nozawa, J.

AU - Koizumi, H.

AU - Uda, S.

PY - 2014/5/1

Y1 - 2014/5/1

N2 - The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.

AB - The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.

KW - crystal growth shape

KW - equilibrium crystal shape

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84901268733&partnerID=8YFLogxK

U2 - 10.1002/pip.2290

DO - 10.1002/pip.2290

M3 - Article

AN - SCOPUS:84901268733

SN - 1062-7995

VL - 22

SP - 574

EP - 580

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 5

ER -

Crystal growth and equilibrium crystal shapes of silicon in the melt

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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