Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

Anas I. Abutaha; S. R. Sarath Kumar; Husam N. Alshareef

doi:10.1063/1.4790644

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

Anas I. Abutaha, S. R. Sarath Kumar, Husam N. Alshareef

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48 Scopus citations

Abstract

We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

Original language	English (US)
Pages (from-to)	053507
Journal	Applied Physics Letters
Volume	102
Issue number	5
DOIs	https://doi.org/10.1063/1.4790644
State	Published - Feb 6 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films",

abstract = "We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.",

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T1 - Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

AU - Abutaha, Anas I.

AU - Sarath Kumar, S. R.

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013/2/6

Y1 - 2013/2/6

N2 - We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

AB - We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

Abstract

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