Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

M. Lanza; M. Porti; M. Nafria; X. Aymerich; G. Benstetter; E. Lodermeier; H. Ranzinger; G. Jaschke; S. Teichert; L. Wilde; P. Michalowski

doi:10.1016/j.mee.2009.03.020

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

M. Lanza, M. Porti, M. Nafria, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. © 2009 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	1921-1924
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.020
State	Published - Jul 1 2009
Externally published	Yes

ASJC Scopus subject areas

Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1016/j.mee.2009.03.020

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title = "Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices",

abstract = "In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. {\textcopyright} 2009 Elsevier B.V. All rights reserved.",

author = "M. Lanza and M. Porti and M. Nafria and X. Aymerich and G. Benstetter and E. Lodermeier and H. Ranzinger and G. Jaschke and S. Teichert and L. Wilde and P. Michalowski",

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T1 - Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

AU - Lanza, M.

AU - Porti, M.

AU - Nafria, M.

AU - Aymerich, X.

AU - Benstetter, G.

AU - Lodermeier, E.

AU - Ranzinger, H.

AU - Jaschke, G.

AU - Teichert, S.

AU - Wilde, L.

AU - Michalowski, P.

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PY - 2009/7/1

Y1 - 2009/7/1

N2 - In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. © 2009 Elsevier B.V. All rights reserved.

AB - In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. © 2009 Elsevier B.V. All rights reserved.

UR - https://linkinghub.elsevier.com/retrieve/pii/S0167931709001622

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DO - 10.1016/j.mee.2009.03.020

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SP - 1921

EP - 1924

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7-9

ER -

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Abstract

ASJC Scopus subject areas

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