@inproceedings{3abc85fa813e4b1394aaf6085473934e,
title = "Cu-doped SiO2 induced atomic interdiffusion in semiconductor nano heterostructures",
abstract = "We investigate the influence of Cu impurity incorporation into the silica cap during the sputtering process on the enhancement of intermixing rate of semiconductor quantum nanostructures. Using the Cu:SiO2 process, we observed bandgap shift of over 200 meV from various GaAs-based quantum well (QW) heterostructures such as GaAs/AlGaAs, InAlGaP/GaAs, and GaAs/AlGaAs systems at significantly lower activation energy than the conventional impurity free vacancy disordering process (IFVD) using undoped SiO2 cap. The results suggest that the Cu:SiO2 process is a promising intermixing technique for the monolithic integration of multiple active/passive photonic components on GaAs-based material systems.",
keywords = "Impurity diffusion, Impurity free vacancy induced disordering, Photonic integrated circuits, Quantum well, Quantum well intermixing",
author = "V. Hongpinyo and Ding, {Y. H.} and J. Anderson and Djie, {H. S.} and Ooi, {B. S.} and Du, {R. R.} and A. Ganjoo and H. Jain",
year = "2008",
doi = "10.4028/0-87849-471-5.33",
language = "English (US)",
isbn = "0878494715",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications",
pages = "33--35",
booktitle = "Semiconductor Photonics",
note = "International Conference on Materials for Advanced Technologies, ICMAT 2007 ; Conference date: 01-07-2007 Through 06-07-2007",
}