Curing quantum dots using inductively coupled argon plasma

T. Mei; D. Nie; H. S. Djie; B. S. Ooi

Curing quantum dots using inductively coupled argon plasma

T. Mei^*, D. Nie, H. S. Djie, B. S. Ooi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. An increase in photoluminescence intensity by 1.7 times is observed in the plasma-treated QDs with the peak wavelength unshifted. The bandgap blue-shift subject to the rapid thermal annealing is also suppressed, denoting improved thermal stability. The PL excitation-dependent experiment shows more prominent state-filling phenomenon in the plasma-treated QDs due to higher carrier density by defect density reduction.

Original language	English (US)
Title of host publication	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Pages	244-247
Number of pages	4
State	Published - 2006
Externally published	Yes
Event	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States Duration: May 7 2006 → May 11 2006

Publication series

Name	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Volume	1

Other

Other	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Country/Territory	United States
City	Boston, MA
Period	05/7/06 → 05/11/06

Keywords

Argon plasma
Intermixing
Photoluminescence
Quantum dot
Thermal annealing

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{fd081cdd2d2d49e0b791ae42bd64ef1b,

title = "Curing quantum dots using inductively coupled argon plasma",

abstract = "The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. An increase in photoluminescence intensity by 1.7 times is observed in the plasma-treated QDs with the peak wavelength unshifted. The bandgap blue-shift subject to the rapid thermal annealing is also suppressed, denoting improved thermal stability. The PL excitation-dependent experiment shows more prominent state-filling phenomenon in the plasma-treated QDs due to higher carrier density by defect density reduction.",

keywords = "Argon plasma, Intermixing, Photoluminescence, Quantum dot, Thermal annealing",

author = "T. Mei and D. Nie and Djie, {H. S.} and Ooi, {B. S.}",

year = "2006",

language = "English (US)",

isbn = "0976798565",

series = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings",

pages = "244--247",

booktitle = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings",

note = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",

}

Mei, T, Nie, D, Djie, HS & Ooi, BS 2006, Curing quantum dots using inductively coupled argon plasma. in 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, vol. 1, pp. 244-247, 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, United States, 05/7/06.

Curing quantum dots using inductively coupled argon plasma. / Mei, T.; Nie, D.; Djie, H. S. et al.
2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. 2006. p. 244-247 (2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Curing quantum dots using inductively coupled argon plasma

AU - Mei, T.

AU - Nie, D.

AU - Djie, H. S.

AU - Ooi, B. S.

PY - 2006

Y1 - 2006

N2 - The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. An increase in photoluminescence intensity by 1.7 times is observed in the plasma-treated QDs with the peak wavelength unshifted. The bandgap blue-shift subject to the rapid thermal annealing is also suppressed, denoting improved thermal stability. The PL excitation-dependent experiment shows more prominent state-filling phenomenon in the plasma-treated QDs due to higher carrier density by defect density reduction.

AB - The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. An increase in photoluminescence intensity by 1.7 times is observed in the plasma-treated QDs with the peak wavelength unshifted. The bandgap blue-shift subject to the rapid thermal annealing is also suppressed, denoting improved thermal stability. The PL excitation-dependent experiment shows more prominent state-filling phenomenon in the plasma-treated QDs due to higher carrier density by defect density reduction.

KW - Argon plasma

KW - Intermixing

KW - Photoluminescence

KW - Quantum dot

KW - Thermal annealing

UR - http://www.scopus.com/inward/record.url?scp=33845204046&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33845204046

SN - 0976798565

SN - 9780976798569

T3 - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

SP - 244

EP - 247

BT - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

T2 - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Y2 - 7 May 2006 through 11 May 2006

ER -

Curing quantum dots using inductively coupled argon plasma

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

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