Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

R. R. Bahabry; A. Gumus; A. T. Kutbee; N. Wehbe; S. M. Ahmed; M. T. Ghoneim; K. -T. Lee; J. A. Rogers; M. M. Hussain

doi:10.1109/PVSC.2016.7749668

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

R. R. Bahabry, A. Gumus, A. T. Kutbee, N. Wehbe, S. M. Ahmed, M. T. Ghoneim, K. -T. Lee, J. A. Rogers, M. M. Hussain

King Abdullah University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	602-605
Number of pages	4
ISBN (Print)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749668
State	Published - Nov 30 2016

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Bahabry, R. R., Gumus, A., Kutbee, A. T., Wehbe, N., Ahmed, S. M., Ghoneim, M. T., Lee, K. .-T., Rogers, J. A., & Hussain, M. M. (2016). Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) (pp. 602-605). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC.2016.7749668

@inproceedings{893f4710ed084f0bb8cee8944335c499,

title = "Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact",

abstract = "We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.",

author = "Bahabry, {R. R.} and A. Gumus and Kutbee, {A. T.} and N. Wehbe and Ahmed, {S. M.} and Ghoneim, {M. T.} and Lee, {K. -T.} and Rogers, {J. A.} and Hussain, {M. M.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2016",

month = nov,

day = "30",

doi = "10.1109/PVSC.2016.7749668",

language = "English (US)",

isbn = "9781509027248",

pages = "602--605",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

Bahabry, RR, Gumus, A, Kutbee, AT, Wehbe, N, Ahmed, SM, Ghoneim, MT, Lee, K-T, Rogers, JA & Hussain, MM 2016, Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Institute of Electrical and Electronics Engineers (IEEE), pp. 602-605. https://doi.org/10.1109/PVSC.2016.7749668

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. / Bahabry, R. R.; Gumus, A.; Kutbee, A. T. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 602-605.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

AU - Bahabry, R. R.

AU - Gumus, A.

AU - Kutbee, A. T.

AU - Wehbe, N.

AU - Ahmed, S. M.

AU - Ghoneim, M. T.

AU - Lee, K. -T.

AU - Rogers, J. A.

AU - Hussain, M. M.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2016/11/30

Y1 - 2016/11/30

N2 - We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

AB - We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

UR - http://hdl.handle.net/10754/622530

UR - http://ieeexplore.ieee.org/document/7749668/

UR - http://www.scopus.com/inward/record.url?scp=85003467555&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7749668

DO - 10.1109/PVSC.2016.7749668

M3 - Conference contribution

SN - 9781509027248

SP - 602

EP - 605

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

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