Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Hongping Zhao; Guangyu Liu; Ronald A. Arif; Nelson Tansu

doi:10.1016/j.sse.2010.05.019

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Hongping Zhao^*, Guangyu Liu, Ronald A. Arif, Nelson Tansu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

210 Scopus citations

Abstract

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k · p method is used to calculate the band structure for InGaN QW. The analysis indicates that the internal quantum efficiency in the conventional 24- In_0.28Ga_0.72N-GaN QW structure reaches its peak at low injection current density and reduces gradually with further increase in current due to the large carrier thermionic emission. Structures combining 24- In _0.28Ga_0.72N QW with 15- Al_0.1Ga_0.9N barriers show slight reduction in quenching of the injection efficiency as current density increases. The use of 15- Al_0.83In_0.17N barriers shows significant reduction in efficiency-droop (10% reduction of the internal quantum efficiency at current density of 620 A/cm²). Thus, InGaN QWs employing thin layers of larger bandgap AlInN barriers suppress the efficiency-droop phenomenon significantly.

Original language	English (US)
Pages (from-to)	1119-1124
Number of pages	6
Journal	Solid-State Electronics
Volume	54
Issue number	10
DOIs	https://doi.org/10.1016/j.sse.2010.05.019
State	Published - Oct 2010
Externally published	Yes

Keywords

Efficiency-droop
III-Nitride
InGaN QWs
Light-emitting diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2010.05.019

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@article{5e2f49afb0924406bce6b030ac513209,

title = "Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes",

abstract = "Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k · p method is used to calculate the band structure for InGaN QW. The analysis indicates that the internal quantum efficiency in the conventional 24- In0.28Ga0.72N-GaN QW structure reaches its peak at low injection current density and reduces gradually with further increase in current due to the large carrier thermionic emission. Structures combining 24- In 0.28Ga0.72N QW with 15- Al0.1Ga0.9N barriers show slight reduction in quenching of the injection efficiency as current density increases. The use of 15- Al0.83In0.17N barriers shows significant reduction in efficiency-droop (10% reduction of the internal quantum efficiency at current density of 620 A/cm2). Thus, InGaN QWs employing thin layers of larger bandgap AlInN barriers suppress the efficiency-droop phenomenon significantly.",

keywords = "Efficiency-droop, III-Nitride, InGaN QWs, Light-emitting diodes",

author = "Hongping Zhao and Guangyu Liu and Arif, {Ronald A.} and Nelson Tansu",

year = "2010",

month = oct,

doi = "10.1016/j.sse.2010.05.019",

language = "English (US)",

volume = "54",

pages = "1119--1124",

journal = "Solid-State Electronics",

issn = "0038-1101",

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number = "10",

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TY - JOUR

T1 - Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Arif, Ronald A.

AU - Tansu, Nelson

PY - 2010/10

Y1 - 2010/10

N2 - Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k · p method is used to calculate the band structure for InGaN QW. The analysis indicates that the internal quantum efficiency in the conventional 24- In0.28Ga0.72N-GaN QW structure reaches its peak at low injection current density and reduces gradually with further increase in current due to the large carrier thermionic emission. Structures combining 24- In 0.28Ga0.72N QW with 15- Al0.1Ga0.9N barriers show slight reduction in quenching of the injection efficiency as current density increases. The use of 15- Al0.83In0.17N barriers shows significant reduction in efficiency-droop (10% reduction of the internal quantum efficiency at current density of 620 A/cm2). Thus, InGaN QWs employing thin layers of larger bandgap AlInN barriers suppress the efficiency-droop phenomenon significantly.

AB - Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k · p method is used to calculate the band structure for InGaN QW. The analysis indicates that the internal quantum efficiency in the conventional 24- In0.28Ga0.72N-GaN QW structure reaches its peak at low injection current density and reduces gradually with further increase in current due to the large carrier thermionic emission. Structures combining 24- In 0.28Ga0.72N QW with 15- Al0.1Ga0.9N barriers show slight reduction in quenching of the injection efficiency as current density increases. The use of 15- Al0.83In0.17N barriers shows significant reduction in efficiency-droop (10% reduction of the internal quantum efficiency at current density of 620 A/cm2). Thus, InGaN QWs employing thin layers of larger bandgap AlInN barriers suppress the efficiency-droop phenomenon significantly.

KW - Efficiency-droop

KW - III-Nitride

KW - InGaN QWs

KW - Light-emitting diodes

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DO - 10.1016/j.sse.2010.05.019

M3 - Article

AN - SCOPUS:77955415098

SN - 0038-1101

VL - 54

SP - 1119

EP - 1124

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Abstract

Keywords

ASJC Scopus subject areas

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