CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

A. Pourhashemi; R.M. Farrell; D.A. Cohen; D.L. Becerra; S. P. DenBaars; S. Nakamura

doi:10.1049/el.2016.3055

CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

A. Pourhashemi, R.M. Farrell, D.A. Cohen, D.L. Becerra, S. P. DenBaars, S. Nakamura

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

Original language	English (US)
Pages (from-to)	2003-2005
Number of pages	3
Journal	Electronics Letters
Volume	52
Issue number	24
DOIs	https://doi.org/10.1049/el.2016.3055
State	Published - Oct 11 2016
Externally published	Yes

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title = "CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates",

abstract = "Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.",

author = "A. Pourhashemi and R.M. Farrell and D.A. Cohen and D.L. Becerra and DenBaars, {S. P.} and S. Nakamura",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC programme (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2016",

month = oct,

day = "11",

doi = "10.1049/el.2016.3055",

language = "English (US)",

volume = "52",

pages = "2003--2005",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

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TY - JOUR

T1 - CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

AU - Pourhashemi, A.

AU - Farrell, R.M.

AU - Cohen, D.A.

AU - Becerra, D.L.

AU - DenBaars, S. P.

AU - Nakamura, S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC programme (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/10/11

Y1 - 2016/10/11

N2 - Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

AB - Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

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U2 - 10.1049/el.2016.3055

DO - 10.1049/el.2016.3055

M3 - Article

SN - 0013-5194

VL - 52

SP - 2003

EP - 2005

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

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