@article{a4bf36fabc7e498182cbb318e61ad2a5,
title = "Damage-free substrate removal technique: Wet undercut etching of semipolar (20-21) laser structures by incorporation of un/relaxed sacrificial layer single quantum well",
abstract = "We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In0.12Ga0.88N single quantum well (SL-SQW) types in semipolar (202 ̅1) flip-chip laser diode (FC-LD) structures. Although 40-nm type I promoted the development of high-quality green active region (AR) devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10-nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.",
author = "Abbas, {Arwa Saud} and Ahmed Alyamani and Shuji Nakamura and DenBaars, {Steven P.}",
note = "KAUST Repository Item: Exported on 2021-04-05 Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053) This publication acknowledges KAUST support, but has no KAUST affiliated authors.",
year = "2021",
month = mar,
day = "30",
doi = "10.35848/1347-4065/abf36d",
language = "English (US)",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
}