TY - JOUR
T1 - Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
AU - Aguirre, Fernando L.
AU - Ranjan, Alok
AU - Raghavan, Nagarajan
AU - Padovani, Andrea
AU - Pazos, Sebastian Matias
AU - Vega, Nahuel
AU - Muller, Nahuel
AU - Debray, Mario
AU - Molina-Reyes, Joel
AU - Pey, Kin Leong
AU - Palumbo, Felix
N1 - KAUST Repository Item: Exported on 2022-05-26
Acknowledgements: This work is supported by MINCyT under Contracts PICT 2016/0579, PICTE 2018/0192 and PME 2015/0196, CONICET under Project PIP-11220130100077CO and UTN under Projects PID-UTN EIUTIBA4395TC3, CCUTIBA4764TC, CCUTNBA6615, CCUTNBA5182 and MATUNBA4936. N. R. would like to acknowledge the support of the A*STAR BRENAIC Project (A18A5b0056) as well as EDB-IPP Project (IGIPAMD2001) for device characterization facility access as well as article processing fee payment. The authors would like to thank Prof. Michel Bosman from National University of Singapore (NUS) for his support with the TEM study included in this work.
PY - 2021/11/10
Y1 - 2021/11/10
N2 - The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.
AB - The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.
UR - http://hdl.handle.net/10754/678256
UR - https://iopscience.iop.org/article/10.35848/1882-0786/ac345d
UR - http://www.scopus.com/inward/record.url?scp=85119325499&partnerID=8YFLogxK
U2 - 10.35848/1882-0786/ac345d
DO - 10.35848/1882-0786/ac345d
M3 - Article
SN - 1882-0786
VL - 14
SP - 121001
JO - APPLIED PHYSICS EXPRESS
JF - APPLIED PHYSICS EXPRESS
IS - 12
ER -