TY - JOUR
T1 - Deep energetic trap states in organic photovoltaic devices
AU - Shuttle, Christopher G.
AU - Treat, Neil D.
AU - Douglas, Jessica D.
AU - Frechet, Jean
AU - Chabinyc, Michael L.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Work at UCSB was supported as part of the Center for Energy Efficient Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001009 and at UCB by the "Plastics Electronics" program at Lawrence Berkeley National Laboratory funded by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. We thank Claudia Piliego and Claire H. Woo for advice about device fabrication with PBDTTPD.
PY - 2011/11/23
Y1 - 2011/11/23
N2 - The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - http://hdl.handle.net/10754/561929
UR - http://doi.wiley.com/10.1002/aenm.201100541
UR - http://www.scopus.com/inward/record.url?scp=84861803467&partnerID=8YFLogxK
U2 - 10.1002/aenm.201100541
DO - 10.1002/aenm.201100541
M3 - Article
SN - 1614-6832
VL - 2
SP - 111
EP - 119
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 1
ER -
