Poly(methyl methacrylate) (PMMA) is a transparent thermoplastic with important applications as a positive resist for various radiation sources. When used as a photoresist, PMMA is typically used with wavelengths shorter than 240 nm, as that is the commonly accepted upper limit of effectiveness. However, the authors have shown patterning of nonamplified PMMA films at 254 nm, which is significant because 254 nm radiation can be produced using inexpensive low-pressure mercury vapor lamps. Data for the etch depth as a function of exposure dose (0-12 h), developer temperature (20-35 °C), and etch time were collected. Dissolution rates of up to many microns a minute are possible, and the dissolution rate ratio of exposed over unexposed PMMA can reach over 3000. This demonstrates the feasibility of PMMA exposure using deep-UV at 254 nm.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Apr 9 2008|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering