Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate

Jian Huang; Yating Wan; Daehwan Jung; Justin Norman; Chen Shang; Qiang Li; Kei May Lau; Arthur C. Gossard; John E. Bowers; Baile Chen

doi:10.1109/DRC46940.2019.9046450

Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate

Jian Huang, Yating Wan, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recently, monolithic integration of III-IV quantum dots (QDs) on Si substrate has attracted much interest due to its potential to integrate photodetectors and lasers in silicon (Si) photonics [1], [2]. However, the device performance is often limited by the defects induced by the lattice mismatch between III-V materials and Si substrate. In this work, we report results of defect characterization on an InAs QD p-i-n photodetector epitaxially grown on Silicon. The device shows a very low dark current and low frequency noise spectroscopy (LFNS) characterizations were carried out to identify and quantify the deep level within the devices.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, DRC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	165-166
Number of pages	2
ISBN (Print)	9781728121123
DOIs	https://doi.org/10.1109/DRC46940.2019.9046450
State	Published - Jun 1 2019
Externally published	Yes

Access to Document

10.1109/DRC46940.2019.9046450

Cite this

Huang, J., Wan, Y., Jung, D., Norman, J., Shang, C., Li, Q., May Lau, K., Gossard, A. C., Bowers, J. E., & Chen, B. (2019). Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate. In Device Research Conference - Conference Digest, DRC (pp. 165-166). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC46940.2019.9046450

@inproceedings{ff4ab502b90346259fef7639c40c9d66,

title = "Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate",

abstract = "Recently, monolithic integration of III-IV quantum dots (QDs) on Si substrate has attracted much interest due to its potential to integrate photodetectors and lasers in silicon (Si) photonics [1], [2]. However, the device performance is often limited by the defects induced by the lattice mismatch between III-V materials and Si substrate. In this work, we report results of defect characterization on an InAs QD p-i-n photodetector epitaxially grown on Silicon. The device shows a very low dark current and low frequency noise spectroscopy (LFNS) characterizations were carried out to identify and quantify the deep level within the devices.",

author = "Jian Huang and Yating Wan and Daehwan Jung and Justin Norman and Chen Shang and Qiang Li and {May Lau}, Kei and Gossard, {Arthur C.} and Bowers, {John E.} and Baile Chen",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2019",

month = jun,

day = "1",

doi = "10.1109/DRC46940.2019.9046450",

language = "English (US)",

isbn = "9781728121123",

pages = "165--166",

booktitle = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

Huang, J, Wan, Y, Jung, D, Norman, J, Shang, C, Li, Q, May Lau, K, Gossard, AC, Bowers, JE & Chen, B 2019, Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate. in Device Research Conference - Conference Digest, DRC. Institute of Electrical and Electronics Engineers Inc., pp. 165-166. https://doi.org/10.1109/DRC46940.2019.9046450

Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate. / Huang, Jian; Wan, Yating; Jung, Daehwan et al.
Device Research Conference - Conference Digest, DRC. Institute of Electrical and Electronics Engineers Inc., 2019. p. 165-166.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate

AU - Huang, Jian

AU - Wan, Yating

AU - Jung, Daehwan

AU - Norman, Justin

AU - Shang, Chen

AU - Li, Qiang

AU - May Lau, Kei

AU - Gossard, Arthur C.

AU - Bowers, John E.

AU - Chen, Baile

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Recently, monolithic integration of III-IV quantum dots (QDs) on Si substrate has attracted much interest due to its potential to integrate photodetectors and lasers in silicon (Si) photonics [1], [2]. However, the device performance is often limited by the defects induced by the lattice mismatch between III-V materials and Si substrate. In this work, we report results of defect characterization on an InAs QD p-i-n photodetector epitaxially grown on Silicon. The device shows a very low dark current and low frequency noise spectroscopy (LFNS) characterizations were carried out to identify and quantify the deep level within the devices.

AB - Recently, monolithic integration of III-IV quantum dots (QDs) on Si substrate has attracted much interest due to its potential to integrate photodetectors and lasers in silicon (Si) photonics [1], [2]. However, the device performance is often limited by the defects induced by the lattice mismatch between III-V materials and Si substrate. In this work, we report results of defect characterization on an InAs QD p-i-n photodetector epitaxially grown on Silicon. The device shows a very low dark current and low frequency noise spectroscopy (LFNS) characterizations were carried out to identify and quantify the deep level within the devices.

UR - https://ieeexplore.ieee.org/document/9046450/

UR - http://www.scopus.com/inward/record.url?scp=85083188133&partnerID=8YFLogxK

U2 - 10.1109/DRC46940.2019.9046450

DO - 10.1109/DRC46940.2019.9046450

M3 - Conference contribution

SN - 9781728121123

SP - 165

EP - 166

BT - Device Research Conference - Conference Digest, DRC

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate

Abstract

Access to Document

Other files and links

Fingerprint

Cite this