TY - PAT
T1 - Defect free single crystal thin layer
AU - Elafandy, Rami T.
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2016/1/28
Y1 - 2016/1/28
N2 - A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
AB - A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
UR - http://hdl.handle.net/10754/595585
UR - http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220160027656%22.PGNR.&OS=DN/20160027656&RS=DN/20160027656
UR - http://assignment.uspto.gov/#/search?adv=publNum:20160027656
UR - http://www.google.com/patents/US20160027656
UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2016027656A1&KC=A1&FT=D
M3 - Patent
M1 - US 20160027656 A1
ER -