Defect interactions in Sn1−xGex random alloys

Alexander Chroneos, H. Bracht, R. W. Grimes, C. Jiang, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

62 Scopus citations


Sn1−xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1−xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard’s Law are consistent with experimental results.
Original languageEnglish (US)
Pages (from-to)252104
JournalApplied Physics Letters
Issue number25
StatePublished - Jun 23 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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