Defects-mediated energy transfer in red-light-emitting Eu-doped ZnO nanowire arrays

Dandan Wang, Guozhong Xing, Ming Gao, Lili Yang, Jinghai Yang, Tom Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

150 Scopus citations


We report on the photoluminescence in perfectly aligned Eu-doped ZnO nanowire arrays that are prepared on sapphire substrates using a vapor transport method with doped sol-gel precursor powder as the vapor source. Under the UV light excitation, Eu3+-related red emission is observed in the Eu-doped ZnO nanowire arrays. By carrying out systematic temperature-dependent and time-resolved photoluminescence experiments, we identify a defect-mediated energy transfer pathway from the ZnO host to the Eu3+ ions. The energy transfer time increases from ∼9 to ∼130 ps after the nanowires are annealed in oxygen ambient, which reduces the defect concentration. This study suggests that defect engineering in bottom-up synthesis is a viable approach to modulate the energy transfer process, which may help to enable the future applications of ZnO-based nanomaterials in optoelectronics and full color displays.

Original languageEnglish (US)
Pages (from-to)22729-22735
Number of pages7
Issue number46
StatePublished - Nov 24 2011
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Energy
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


Dive into the research topics of 'Defects-mediated energy transfer in red-light-emitting Eu-doped ZnO nanowire arrays'. Together they form a unique fingerprint.

Cite this