Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics

Vishal Khandelwal; Manoj Kumar Rajbhar; Glen Isaac Maciel García; Xiao Tang; Biplab Sarkar; Xiaohang Li

doi:10.35848/1347-4065/acdbf3

Demonstration of β-Ga₂O₃ nonvolatile flash memory for oxide electronics

Vishal Khandelwal^*, Manoj Kumar Rajbhar, Glen Isaac Maciel García, Xiao Tang, Biplab Sarkar, Xiaohang Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This report demonstrates an ultrawide bandgap β-Ga₂O₃ flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga₂O₃ film had TiN as the floating gate (FG) and Al₂O₃ as tunneling and gate oxides. A memory window of > 4 V was obtained between the programmed and erased states of the device. The memory states showed negligible degradation in threshold voltage (V_TH) even after 5000 s, exhibiting excellent nonvolatility. Furthermore, the device showed a V_TH of ∼0.3 V after applying a 17 V programming voltage pulse, indicating the potential of the electron trapping phenomenon in the FG to achieve enhancement-mode operation in β-Ga₂O₃ transistors for high-power and logic applications. This study would provide insights for future oxide electronics integrating β-Ga₂O₃ memory.

Original language	English (US)
Article number	060902
Journal	Japanese Journal of Applied Physics
Volume	62
Issue number	6
DOIs	https://doi.org/10.35848/1347-4065/acdbf3
State	Published - Jun 1 2023

Keywords

flash memory
floating gate
oxide electronics
program
ultrawide bandgap
β-GaO

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.35848/1347-4065/acdbf3

Cite this

@article{59f3255972e44e128077a58d3a349a5d,

title = "Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics",

abstract = "This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film had TiN as the floating gate (FG) and Al2O3 as tunneling and gate oxides. A memory window of > 4 V was obtained between the programmed and erased states of the device. The memory states showed negligible degradation in threshold voltage (VTH) even after 5000 s, exhibiting excellent nonvolatility. Furthermore, the device showed a VTH of ∼0.3 V after applying a 17 V programming voltage pulse, indicating the potential of the electron trapping phenomenon in the FG to achieve enhancement-mode operation in β-Ga2O3 transistors for high-power and logic applications. This study would provide insights for future oxide electronics integrating β-Ga2O3 memory.",

keywords = "flash memory, floating gate, oxide electronics, program, ultrawide bandgap, β-GaO",

author = "Vishal Khandelwal and Rajbhar, {Manoj Kumar} and Garc{\'i}a, {Glen Isaac Maciel} and Xiao Tang and Biplab Sarkar and Xiaohang Li",

note = "Funding Information: The KAUST researchers are grateful for KAUST Nanofabrication Corelab and funding support of the Baseline Fund BAS/1/1664-01-01, Near-term Grand Challenge Fund REI/1/4999-01-01, and Impact Acceleration Fund REI/1/5124-01-01. Publisher Copyright: {\textcopyright} 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd",

year = "2023",

month = jun,

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doi = "10.35848/1347-4065/acdbf3",

language = "English (US)",

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journal = "Japanese Journal of Applied Physics",

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T1 - Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics

AU - Khandelwal, Vishal

AU - Rajbhar, Manoj Kumar

AU - García, Glen Isaac Maciel

AU - Tang, Xiao

AU - Sarkar, Biplab

AU - Li, Xiaohang

N1 - Funding Information: The KAUST researchers are grateful for KAUST Nanofabrication Corelab and funding support of the Baseline Fund BAS/1/1664-01-01, Near-term Grand Challenge Fund REI/1/4999-01-01, and Impact Acceleration Fund REI/1/5124-01-01. Publisher Copyright: © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

PY - 2023/6/1

Y1 - 2023/6/1

N2 - This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film had TiN as the floating gate (FG) and Al2O3 as tunneling and gate oxides. A memory window of > 4 V was obtained between the programmed and erased states of the device. The memory states showed negligible degradation in threshold voltage (VTH) even after 5000 s, exhibiting excellent nonvolatility. Furthermore, the device showed a VTH of ∼0.3 V after applying a 17 V programming voltage pulse, indicating the potential of the electron trapping phenomenon in the FG to achieve enhancement-mode operation in β-Ga2O3 transistors for high-power and logic applications. This study would provide insights for future oxide electronics integrating β-Ga2O3 memory.

AB - This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film had TiN as the floating gate (FG) and Al2O3 as tunneling and gate oxides. A memory window of > 4 V was obtained between the programmed and erased states of the device. The memory states showed negligible degradation in threshold voltage (VTH) even after 5000 s, exhibiting excellent nonvolatility. Furthermore, the device showed a VTH of ∼0.3 V after applying a 17 V programming voltage pulse, indicating the potential of the electron trapping phenomenon in the FG to achieve enhancement-mode operation in β-Ga2O3 transistors for high-power and logic applications. This study would provide insights for future oxide electronics integrating β-Ga2O3 memory.

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KW - floating gate

KW - oxide electronics

KW - program

KW - ultrawide bandgap

KW - β-GaO

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