Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

J. T. Leonard; E. C. Young; B. P. Yonkee; D. A. Cohen; T. Margalith; S. P. DenBaars; J. S. Speck; S. Nakamura

doi:10.1063/1.4929944

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, S. Nakamura

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141 Scopus citations

Abstract

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (Jth) of ∼3.5 kA/cm2, compared to the ITO VCSEL Jth of 8 kA/cm2. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

Original language	English (US)
Pages (from-to)	091105
Journal	APPLIED PHYSICS LETTERS
Volume	107
Issue number	9
DOIs	https://doi.org/10.1063/1.4929944
State	Published - 2015
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{d250a9601244486f92089ba720d36e36,

title = "Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact",

abstract = "We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (Jth) of ∼3.5 kA/cm2, compared to the ITO VCSEL Jth of 8 kA/cm2. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.",

author = "Leonard, {J. T.} and Young, {E. C.} and Yonkee, {B. P.} and Cohen, {D. A.} and T. Margalith and DenBaars, {S. P.} and Speck, {J. S.} and S. Nakamura",

note = "KAUST Repository Item: Exported on 2021-11-01 Acknowledgements: The authors would like to thank Mitsubishi Chemical Corporation for providing high-quality free-standing m-plane GaN substrates. This work was funded in part by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program, and the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). Partial funding for this work came from Professor Boon S. Ooi at King Abdullah University of Science and Technology (KAUST), through his participation in the KACST-TIC program. A portion of this work was done in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which was supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2015",

doi = "10.1063/1.4929944",

language = "English (US)",

volume = "107",

pages = "091105",

journal = "APPLIED PHYSICS LETTERS",

issn = "1077-3118",

publisher = "American Institute of Physics",

number = "9",

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TY - JOUR

T1 - Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

AU - Leonard, J. T.

AU - Young, E. C.

AU - Yonkee, B. P.

AU - Cohen, D. A.

AU - Margalith, T.

AU - DenBaars, S. P.

AU - Speck, J. S.

AU - Nakamura, S.

N1 - KAUST Repository Item: Exported on 2021-11-01 Acknowledgements: The authors would like to thank Mitsubishi Chemical Corporation for providing high-quality free-standing m-plane GaN substrates. This work was funded in part by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program, and the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). Partial funding for this work came from Professor Boon S. Ooi at King Abdullah University of Science and Technology (KAUST), through his participation in the KACST-TIC program. A portion of this work was done in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which was supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2015

Y1 - 2015

N2 - We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (Jth) of ∼3.5 kA/cm2, compared to the ITO VCSEL Jth of 8 kA/cm2. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

AB - We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (Jth) of ∼3.5 kA/cm2, compared to the ITO VCSEL Jth of 8 kA/cm2. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

UR - http://hdl.handle.net/10754/672998

UR - http://aip.scitation.org/doi/10.1063/1.4929944

UR - http://www.scopus.com/inward/record.url?scp=84941088050&partnerID=8YFLogxK

U2 - 10.1063/1.4929944

DO - 10.1063/1.4929944

M3 - Article

SN - 1077-3118

VL - 107

SP - 091105

JO - APPLIED PHYSICS LETTERS

JF - APPLIED PHYSICS LETTERS

IS - 9

ER -

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

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