@inproceedings{e9af3abc4b164c53ac4b6cab28961a51,
title = "Demonstration of Ga2O3trigate transistors on (100) silicon substrates",
abstract = "In this paper we demonstrated the UWBG Ga2O3 trigate transistors heterogeneously integrated on silicon substrate. This trigate transistor operates in depletion mode having decent Ion/Ioff ratio (105) and high transconductance (1 μS). Followed by the mobility is around 1.2 cm2/V. s. This work suggests that the ultrawide bandgap oxide transistors can be fabricated on various heterogenous substrates to achieve highly integrated, low cost, and robust electronics.",
keywords = "Ga203, heterogenous heterostructures, transistors, ultrawide bandgap",
author = "Saravanan Yuvaraja and Vishal Khandelwal and Shibin Krishna and Yi Lu and Zhiyuan Liu and Mritunjay Kumar and Dhanu Chettri and Xiao Tang and Garcia, {Glen Issac Mac Iel} and Liao, {Che Hao} and Xiaohang Li",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 ; Conference date: 11-12-2022 Through 14-12-2022",
year = "2022",
doi = "10.1109/ICEE56203.2022.10117786",
language = "English (US)",
series = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",
address = "United States",
}