Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications

Fred Chen; Matthew Spencer; Rhesa Nathanael; Chengcheng Wang; Hossein Fariborzi; Abhinav Gupta; Hei Kam; Vincent Pott; Jaeseok Jeon; Tsu Jae King Liu; Dejan Markovic; Vladimir Stojanovic; Elad Alon

doi:10.1109/ISSCC.2010.5434010

Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications

Fred Chen^*, Matthew Spencer, Rhesa Nathanael, Chengcheng Wang, Hossein Fariborzi, Abhinav Gupta, Hei Kam, Vincent Pott, Jaeseok Jeon, Tsu Jae King Liu, Dejan Markovic, Vladimir Stojanovic, Elad Alon

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

59 Scopus citations

Abstract

Due to transistor leakage, CMOS circuits have a well-defined lower limit on their achievable energy efficiency [1]. Once this limit is reached, power-constrained applications will face a cap on their maximum throughput independent of their level of parallelism. Avoiding this roadblock requires an alternate switching device with steeper sub-threshold slope-i.e., lower V _DD/I_on for the same I_on/I_off [2]. One promising class of such devices with nearly ideal I_on/I _off characteristics are electro-statically actuated micro-electro-mechanical (MEM) switches [6]. Although mechanical movement makes MEM circuit delay significantly larger than that of CMOS, we have recently shown that with optimized circuit topologies MEM switches may potentially enable ∼10x lower energy over CMOS at up to ∼100MHz frequencies [3].

Original language	English (US)
Title of host publication	2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers
Pages	150-151
Number of pages	2
DOIs	https://doi.org/10.1109/ISSCC.2010.5434010
State	Published - 2010
Externally published	Yes
Event	2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - San Francisco, CA, United States Duration: Feb 7 2010 → Feb 11 2010

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	53
ISSN (Print)	0193-6530

Other

Other	2010 IEEE International Solid-State Circuits Conference, ISSCC 2010
Country/Territory	United States
City	San Francisco, CA
Period	02/7/10 → 02/11/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/ISSCC.2010.5434010

Cite this

Chen, F., Spencer, M., Nathanael, R., Wang, C., Fariborzi, H., Gupta, A., Kam, H., Pott, V., Jeon, J., King Liu, T. J., Markovic, D., Stojanovic, V., & Alon, E. (2010). Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications. In 2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers (pp. 150-151). Article 5434010 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 53). https://doi.org/10.1109/ISSCC.2010.5434010

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title = "Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications",

abstract = "Due to transistor leakage, CMOS circuits have a well-defined lower limit on their achievable energy efficiency [1]. Once this limit is reached, power-constrained applications will face a cap on their maximum throughput independent of their level of parallelism. Avoiding this roadblock requires an alternate switching device with steeper sub-threshold slope-i.e., lower V DD/Ion for the same Ion/Ioff [2]. One promising class of such devices with nearly ideal Ion/I off characteristics are electro-statically actuated micro-electro-mechanical (MEM) switches [6]. Although mechanical movement makes MEM circuit delay significantly larger than that of CMOS, we have recently shown that with optimized circuit topologies MEM switches may potentially enable ∼10x lower energy over CMOS at up to ∼100MHz frequencies [3].",

author = "Fred Chen and Matthew Spencer and Rhesa Nathanael and Chengcheng Wang and Hossein Fariborzi and Abhinav Gupta and Hei Kam and Vincent Pott and Jaeseok Jeon and {King Liu}, {Tsu Jae} and Dejan Markovic and Vladimir Stojanovic and Elad Alon",

year = "2010",

doi = "10.1109/ISSCC.2010.5434010",

language = "English (US)",

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series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

pages = "150--151",

booktitle = "2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers",

note = "2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 ; Conference date: 07-02-2010 Through 11-02-2010",

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Chen, F, Spencer, M, Nathanael, R, Wang, C, Fariborzi, H, Gupta, A, Kam, H, Pott, V, Jeon, J, King Liu, TJ, Markovic, D, Stojanovic, V & Alon, E 2010, Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications. in 2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers., 5434010, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 53, pp. 150-151, 2010 IEEE International Solid-State Circuits Conference, ISSCC 2010, San Francisco, CA, United States, 02/7/10. https://doi.org/10.1109/ISSCC.2010.5434010

Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications. / Chen, Fred; Spencer, Matthew; Nathanael, Rhesa et al.
2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers. 2010. p. 150-151 5434010 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 53).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chen, Fred

AU - Spencer, Matthew

AU - Nathanael, Rhesa

AU - Wang, Chengcheng

AU - Fariborzi, Hossein

AU - Gupta, Abhinav

AU - Kam, Hei

AU - Pott, Vincent

AU - Jeon, Jaeseok

AU - King Liu, Tsu Jae

AU - Markovic, Dejan

AU - Stojanovic, Vladimir

AU - Alon, Elad

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AB - Due to transistor leakage, CMOS circuits have a well-defined lower limit on their achievable energy efficiency [1]. Once this limit is reached, power-constrained applications will face a cap on their maximum throughput independent of their level of parallelism. Avoiding this roadblock requires an alternate switching device with steeper sub-threshold slope-i.e., lower V DD/Ion for the same Ion/Ioff [2]. One promising class of such devices with nearly ideal Ion/I off characteristics are electro-statically actuated micro-electro-mechanical (MEM) switches [6]. Although mechanical movement makes MEM circuit delay significantly larger than that of CMOS, we have recently shown that with optimized circuit topologies MEM switches may potentially enable ∼10x lower energy over CMOS at up to ∼100MHz frequencies [3].

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Chen F, Spencer M, Nathanael R, Wang C, Fariborzi H, Gupta A et al. Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications. In 2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers. 2010. p. 150-151. 5434010. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC.2010.5434010

Demonstration of integrated micro-electro-mechanical switch circuits for VLSI applications

Abstract

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ASJC Scopus subject areas

UN SDGs

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