Design and analysis of 2T-2M Ternary content addressable memories

M. A. Bahloul, M. E. Fouda, R. Naous, M. A. Zidan, Ahmed Eltawil, F. Kurdahi, K. N. Salama

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

Associate and approximate computing using resistive memory based Ternary Content Addressable Memory is becoming widely used. In this paper, a simplified model based analysis of a 2T2M-Ternary Content Addressable Memory using memristors is introduced. A comprehensive study is presented taking into consideration different circuit parameters and parasitic effects. Parameters such as the memristor Rh/Rl ratio, transistor technology, operating frequency, and memory width are taken into consideration. The proposed model is verified with SPICE showing a high degree of matching between theory and simulation. The utility of the model is established using a design example.

Original languageEnglish (US)
Title of host publication2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1430-1433
Number of pages4
ISBN (Electronic)9781509063895
DOIs
StatePublished - Sep 27 2017
Event60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017 - Boston, United States
Duration: Aug 6 2017Aug 9 2017

Publication series

NameMidwest Symposium on Circuits and Systems
Volume2017-August
ISSN (Print)1548-3746

Conference

Conference60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017
Country/TerritoryUnited States
CityBoston
Period08/6/1708/9/17

Keywords

  • 2T2M
  • Analysis
  • Design
  • Mathematical model
  • Memristor
  • Ternary Content Addressable Memory (MTCAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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