Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions

S. M. Mitani; P. K. Choudhury; M. S. Alias

doi:10.1007/s10946-007-0046-z

Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions

S. M. Mitani^*, P. K. Choudhury, M. S. Alias

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The present paper deals with the analysis of a non-oxide type of vertical-cavity surface-emitting laser (VCSEL) for operation at 850 nm. The modeling and characterization of the VCSEL is presented in the context of design considerations. Efforts are made to emphasize the behavioral features of the proposed VCSEL, in view of the analytical investigation, which has been performed through a series of simulations for various relevant parameters that are vital for the determination of the VCSEL characteristics. Some of these parameters are the intensity and refractive-index distributions, gain response, spontaneous emission, material gain variations, etc. The results obtained are compared with the oxide-confined VCSEL. It is observed that the proposed model of the VCSEL is suitable at the operating wavelength of 850 nm.

Original language	English (US)
Pages (from-to)	610-618
Number of pages	9
Journal	Journal of Russian Laser Research
Volume	28
Issue number	6
DOIs	https://doi.org/10.1007/s10946-007-0046-z
State	Published - Nov 2007
Externally published	Yes

Keywords

Optoelectronic devices
Quantum-well devices
VCSELs

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)

Access to Document

10.1007/s10946-007-0046-z

Cite this

@article{417fd2991ca44e35a46c80b1922feb73,

title = "Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions",

abstract = "The present paper deals with the analysis of a non-oxide type of vertical-cavity surface-emitting laser (VCSEL) for operation at 850 nm. The modeling and characterization of the VCSEL is presented in the context of design considerations. Efforts are made to emphasize the behavioral features of the proposed VCSEL, in view of the analytical investigation, which has been performed through a series of simulations for various relevant parameters that are vital for the determination of the VCSEL characteristics. Some of these parameters are the intensity and refractive-index distributions, gain response, spontaneous emission, material gain variations, etc. The results obtained are compared with the oxide-confined VCSEL. It is observed that the proposed model of the VCSEL is suitable at the operating wavelength of 850 nm.",

keywords = "Optoelectronic devices, Quantum-well devices, VCSELs",

author = "Mitani, {S. M.} and Choudhury, {P. K.} and Alias, {M. S.}",

year = "2007",

month = nov,

doi = "10.1007/s10946-007-0046-z",

language = "English (US)",

volume = "28",

pages = "610--618",

journal = "Journal of Russian Laser Research",

issn = "1071-2836",

publisher = "Springer New York",

number = "6",

}

TY - JOUR

T1 - Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions

AU - Mitani, S. M.

AU - Choudhury, P. K.

AU - Alias, M. S.

PY - 2007/11

Y1 - 2007/11

N2 - The present paper deals with the analysis of a non-oxide type of vertical-cavity surface-emitting laser (VCSEL) for operation at 850 nm. The modeling and characterization of the VCSEL is presented in the context of design considerations. Efforts are made to emphasize the behavioral features of the proposed VCSEL, in view of the analytical investigation, which has been performed through a series of simulations for various relevant parameters that are vital for the determination of the VCSEL characteristics. Some of these parameters are the intensity and refractive-index distributions, gain response, spontaneous emission, material gain variations, etc. The results obtained are compared with the oxide-confined VCSEL. It is observed that the proposed model of the VCSEL is suitable at the operating wavelength of 850 nm.

AB - The present paper deals with the analysis of a non-oxide type of vertical-cavity surface-emitting laser (VCSEL) for operation at 850 nm. The modeling and characterization of the VCSEL is presented in the context of design considerations. Efforts are made to emphasize the behavioral features of the proposed VCSEL, in view of the analytical investigation, which has been performed through a series of simulations for various relevant parameters that are vital for the determination of the VCSEL characteristics. Some of these parameters are the intensity and refractive-index distributions, gain response, spontaneous emission, material gain variations, etc. The results obtained are compared with the oxide-confined VCSEL. It is observed that the proposed model of the VCSEL is suitable at the operating wavelength of 850 nm.

KW - Optoelectronic devices

KW - Quantum-well devices

KW - VCSELs

UR - http://www.scopus.com/inward/record.url?scp=36749037878&partnerID=8YFLogxK

U2 - 10.1007/s10946-007-0046-z

DO - 10.1007/s10946-007-0046-z

M3 - Article

AN - SCOPUS:36749037878

SN - 1071-2836

VL - 28

SP - 610

EP - 618

JO - Journal of Russian Laser Research

JF - Journal of Russian Laser Research

IS - 6

ER -

Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this