Design of VGSOT-MTJ-Based Logic Locking for High-Speed Digital Circuits

Danial Khan, Selma Amara, Yehia Mahmoud Massoud

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Emerging spintronics devices in recent research have received much interest in various fields. Their unique physical aspects are being explored to keep Moore’s law alive. Therefore, the hardware security aspects of system-on-a-chip (SoC) designs using spintronics devices becomes important. Magnetic tunnel junctions (MTJ) are a potential candidate in spintronics-based devices for beyond-CMOS applications. This work uses voltage-gated spin-orbit torque-assisted magnetic tunnel junction (VGSOT-MTJ) based on the Verilog-A behavioral model to design a possible logic-locking system for hardware security. Compared with the SOT MTJ, which uses a heavy metal strip below the MTJ stack, VGSOT-MTJ has an antiferromagnetic (AFM) strip that utilizes the voltage-controlled magnetic anisotropy (VCMA) effect to significantly reduce the (Formula presented.). To design the logic-locking block, we performed a Monte Carlo analysis to account for the effect of process variation (PV) on critical MTJ parameters. Eye diagram tests and mask designing were performed, which included the effect of thermal noise and PV for high-speed digital circuit operations. Finally, transient performance was analyzed to demonstrate the VGSOT-MTJ’s ability to design logic-locking blocks from the circuit operation perspective.
Original languageEnglish (US)
Pages (from-to)3537
JournalElectronics (Switzerland)
Volume11
Issue number21
DOIs
StatePublished - Oct 30 2022

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