Abstract
Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere operating current and single-mode emission at 1310 nm wavelength.
Original language | English (US) |
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Title of host publication | ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics |
Pages | 311-315 |
Number of pages | 5 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
Event | 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor, Malaysia Duration: Nov 25 2008 → Nov 27 2008 |
Other
Other | 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 |
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Country/Territory | Malaysia |
City | Johor Bahru, Johor |
Period | 11/25/08 → 11/27/08 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials