Design optimization of GaInNAs quantum wells for long wavelength VCSEL

Mohd Sharizal Alias; Mohd Fauzi Maulud; Mitani Sufian; Sahbuddin Shaari; Nor Azlian Abd Manaf

doi:10.1109/SMELEC.2008.4770330

Design optimization of GaInNAs quantum wells for long wavelength VCSEL

Mohd Sharizal Alias, Mohd Fauzi Maulud, Mitani Sufian, Sahbuddin Shaari, Nor Azlian Abd Manaf

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere operating current and single-mode emission at 1310 nm wavelength.

Original language	English (US)
Title of host publication	ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics
Pages	311-315
Number of pages	5
DOIs	https://doi.org/10.1109/SMELEC.2008.4770330
State	Published - 2008
Externally published	Yes
Event	2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor, Malaysia Duration: Nov 25 2008 → Nov 27 2008

Other

Other	2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
Country/Territory	Malaysia
City	Johor Bahru, Johor
Period	11/25/08 → 11/27/08

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/SMELEC.2008.4770330

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title = "Design optimization of GaInNAs quantum wells for long wavelength VCSEL",

abstract = "Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere operating current and single-mode emission at 1310 nm wavelength.",

author = "Alias, {Mohd Sharizal} and Maulud, {Mohd Fauzi} and Mitani Sufian and Sahbuddin Shaari and Manaf, {Nor Azlian Abd}",

year = "2008",

doi = "10.1109/SMELEC.2008.4770330",

language = "English (US)",

isbn = "9781424425617",

pages = "311--315",

booktitle = "ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics",

note = "2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 ; Conference date: 25-11-2008 Through 27-11-2008",

}

Alias, MS, Maulud, MF, Sufian, M, Shaari, S & Manaf, NAA 2008, Design optimization of GaInNAs quantum wells for long wavelength VCSEL. in ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics., 4770330, pp. 311-315, 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008, Johor Bahru, Johor, Malaysia, 11/25/08. https://doi.org/10.1109/SMELEC.2008.4770330

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T1 - Design optimization of GaInNAs quantum wells for long wavelength VCSEL

AU - Alias, Mohd Sharizal

AU - Maulud, Mohd Fauzi

AU - Sufian, Mitani

AU - Shaari, Sahbuddin

AU - Manaf, Nor Azlian Abd

PY - 2008

Y1 - 2008

N2 - Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere operating current and single-mode emission at 1310 nm wavelength.

AB - Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere operating current and single-mode emission at 1310 nm wavelength.

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U2 - 10.1109/SMELEC.2008.4770330

DO - 10.1109/SMELEC.2008.4770330

M3 - Conference contribution

AN - SCOPUS:65949091157

SN - 9781424425617

SP - 311

EP - 315

BT - ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics

T2 - 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008

Y2 - 25 November 2008 through 27 November 2008

ER -

Design optimization of GaInNAs quantum wells for long wavelength VCSEL

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