Detection of Hazardous Analyte Using Transparent Gate Thin-Film Transistor

Ajay Kumar, Amit Kumar Goyal, Manan Roy, Neha Gupta, Mm Tripathi, Rishu Chaujar

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Scopus citations


The work mainly focuses on the detection of a hazardous analyte like silicon carbide using TGTFT which has an ITO gate, a bio-receptor of silicon nitride and further compared with the same device with an additional analyte, i.e., silicon carbide added into it. Transfer characteristics and some more electrical properties have been simulated and compared. The drain current (Id) of the analyte TFT increased by 21.59% in contrast to the device which has air. A substantial increment of 17.34% in the electric field of the analyte-added TFT was observed in contrast to the air-filled TGTFT. Some changes were observed in valence band energy (VBE) and conduction band energy (CBE) of analyte device and without analyte device. The addition of analyte changes chemical composition of interface, i.e., changes the electron concentration at interface and therefore altering the effect of specific gate voltage as potential of the interface changes resulting in different results from the one with no analyte. Therefore, changes in the electrical properties of the device pave the way of hazardous analyte detection.
Original languageEnglish (US)
Title of host publicationLecture Notes in Networks and Systems
Number of pages8
StatePublished - Jan 1 2020
Externally publishedYes


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