TY - JOUR
T1 - Determination of band offsets of Ga$_{2}$O$_{3}$/FTO heterojunction for current spreading applications
AU - Torres Castanedo, Carlos Gerardo
AU - Li, Kuanghui
AU - Braic, Laurentiu
AU - Li, Xiaohang
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: The authors would like to acknowledge the support of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01 and URF/1/3771-01-01, and GCC Research Council REP/1/3189-01-01
PY - 2020/4/1
Y1 - 2020/4/1
N2 - Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal stability, larger bandgap, and lower cost. However, the Ga2O3/FTO heterojunction including the important band offset and the I-V characteristics have not been reported. In this work, we have grown the Ga2O3/FTO heterojunction and performed X-ray photoelectron spectroscopy (XPS) measurement. The conduction and valence band offsets were determined to be 0.11±0.10 and 0.42±0.10 eV, indicating a minor barrier for electron transport and a type-I heterojunction. The subsequent I-V measurement of the Ga2O3/FTO heterojunction exhibited ohmic behavior. The results of this work manifests excellent candidacy of FTO for current spreading layers of Ga2O3 devices for high temperature and UV applications.
AB - Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal stability, larger bandgap, and lower cost. However, the Ga2O3/FTO heterojunction including the important band offset and the I-V characteristics have not been reported. In this work, we have grown the Ga2O3/FTO heterojunction and performed X-ray photoelectron spectroscopy (XPS) measurement. The conduction and valence band offsets were determined to be 0.11±0.10 and 0.42±0.10 eV, indicating a minor barrier for electron transport and a type-I heterojunction. The subsequent I-V measurement of the Ga2O3/FTO heterojunction exhibited ohmic behavior. The results of this work manifests excellent candidacy of FTO for current spreading layers of Ga2O3 devices for high temperature and UV applications.
UR - http://hdl.handle.net/10754/662421
UR - https://iopscience.iop.org/article/10.1088/1361-6463/ab8518
UR - http://www.scopus.com/inward/record.url?scp=85086460836&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/ab8518
DO - 10.1088/1361-6463/ab8518
M3 - Article
SN - 0022-3727
VL - 53
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 31
ER -