Determination of contact resistivity by the cox and strack method for metal contacts to bulk bismuth antimony telluride

R. P. Gupta; J. B. White; O. D. Iyore; U. Chakrabarti; Husam Niman Alshareef; B. E. Gnade

doi:10.1149/1.3143918

Determination of contact resistivity by the cox and strack method for metal contacts to bulk bismuth antimony telluride

R. P. Gupta, J. B. White, O. D. Iyore, U. Chakrabarti, Husam Niman Alshareef, B. E. Gnade

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We successfully demonstrate the application of the Cox and Strack (CS) technique for contact resistivity measurement of metal contacts to bulk bismuth antimony telluride. The transmission line method (TLM), typically used for thin films, gives inconsistent contact resistivity results for bulk thermoelectric (TE) materials. Using TLM we observed a 10× variation in measured contact resistivity for the TE material thickness range of 300-1000 μm. In contrast, the CS method gives a <3% variation over the same substrate thickness range. We propose that this variability difference is related to the direction of current flow in the bulk TE materials.

Original language	English (US)
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	8
DOIs	https://doi.org/10.1149/1.3143918
State	Published - Jun 29 2009

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Determination of contact resistivity by the cox and strack method for metal contacts to bulk bismuth antimony telluride",

abstract = "We successfully demonstrate the application of the Cox and Strack (CS) technique for contact resistivity measurement of metal contacts to bulk bismuth antimony telluride. The transmission line method (TLM), typically used for thin films, gives inconsistent contact resistivity results for bulk thermoelectric (TE) materials. Using TLM we observed a 10× variation in measured contact resistivity for the TE material thickness range of 300-1000 μm. In contrast, the CS method gives a <3% variation over the same substrate thickness range. We propose that this variability difference is related to the direction of current flow in the bulk TE materials.",

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AU - Gupta, R. P.

AU - White, J. B.

AU - Iyore, O. D.

AU - Chakrabarti, U.

AU - Alshareef, Husam Niman

AU - Gnade, B. E.

PY - 2009/6/29

Y1 - 2009/6/29

N2 - We successfully demonstrate the application of the Cox and Strack (CS) technique for contact resistivity measurement of metal contacts to bulk bismuth antimony telluride. The transmission line method (TLM), typically used for thin films, gives inconsistent contact resistivity results for bulk thermoelectric (TE) materials. Using TLM we observed a 10× variation in measured contact resistivity for the TE material thickness range of 300-1000 μm. In contrast, the CS method gives a <3% variation over the same substrate thickness range. We propose that this variability difference is related to the direction of current flow in the bulk TE materials.

AB - We successfully demonstrate the application of the Cox and Strack (CS) technique for contact resistivity measurement of metal contacts to bulk bismuth antimony telluride. The transmission line method (TLM), typically used for thin films, gives inconsistent contact resistivity results for bulk thermoelectric (TE) materials. Using TLM we observed a 10× variation in measured contact resistivity for the TE material thickness range of 300-1000 μm. In contrast, the CS method gives a <3% variation over the same substrate thickness range. We propose that this variability difference is related to the direction of current flow in the bulk TE materials.

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JF - Electrochemical and Solid-State Letters

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ER -

Determination of contact resistivity by the cox and strack method for metal contacts to bulk bismuth antimony telluride

Abstract

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