Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs

W. J. Fan*, S. F. Yoon, W. K. Cheah, W. K. Loke, T. K. Ng, S. Z. Wang, R. Liu, A. Wee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

26 Scopus citations


High-resolution X-ray diffraction (HRXRD) and secondary-ion mass spectroscopy (SIMS) were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that for the coherent samples, N compositions measured by the two methods agree well at lower N compositions (x<3%), deviate at larger N compositions (x>3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs underestimates N composition at larger N compositions. We found that the underestimation is 8.1% at the xSIMS=3.7%. Partially strain relaxed samples were also studied by using (115) XRD mapping. The strain relaxation may cause N composition underestimated by XRD.

Original languageEnglish (US)
Pages (from-to)470-474
Number of pages5
JournalJournal of Crystal Growth
Issue number3-4 SPEC. ISS.
StatePublished - Aug 1 2004
Externally publishedYes
EventICMAT 2003, Symposium H, Compound Semiconductors in Electronic - Singapore, Singapore
Duration: Dec 7 2003Dec 12 2004


  • A1. High resolution X-ray diffraction
  • A1. Secondary-ion mass spectroscopy
  • A3. Molecular beam epitaxy
  • B1. GaAsN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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