@inproceedings{a63f4284cbe0419a96091f8fe0bc26b8,
title = "Development of slurry concentration adjustable tungsten chemical mechanical planarization process",
abstract = "Understanding the interaction of slurry component and concentration with polishing condition is necessary for developing a tightly controlled chemical mechanical planarization (CMP) process. This paper investigates the impacts of flowrate and concentration variation of tungsten CMP slurry. The slurry concentration adjustable tungsten CMP process is described. Finally, physical characterization and electrical results are presented. We demonstrate that the new process yields a significant improvement on the oxide erosion and a remarkable reduction in the cost of consumables.",
keywords = "Chemical industry, Chemical technology, Costs, Manufacturing processes, Planarization, Plugs, Pulp manufacturing, Semiconductor device manufacture, Slurries, Tungsten",
author = "Wang, {X. B.} and Tan, {J. B.} and Tan, {P. S.} and Charles Lin and Zhao, {H. J.}",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 11th IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 2000 ; Conference date: 12-09-2000 Through 14-09-2000",
year = "2000",
doi = "10.1109/ASMC.2000.902622",
language = "English (US)",
series = "ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "422--424",
booktitle = "2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop",
address = "United States",
}