Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application

J. Huang^*, P. D. Kirsch, D. Heh, C. Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D. C. Gilmer, N. Goel, M. A. Quevedo-Lopez, C. Young, C. S. Park, C. Park, P. Y. Hung, J. Price, H. R. Harris, B. H. Lee, H. H. Tseng, R. Jammy