Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

Guangyu Liu; Jing Zhang; Hongping Zhao; Nelson Tansu

doi:10.1117/12.909633

Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

Guangyu Liu^*, Jing Zhang, Hongping Zhao, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The MOCVD growths and device characteristics of 500-nm emitting InGaN quantum well (QW) light-emitting diodes (LEDs) with the insertion of thin (~1 nm) AlInN barrier layers were investigated for efficiency droop suppression. Preliminary device characteristics of InGaN QW LEDs with thin AlInN barrier layers were also presented.

Original language	English (US)
Title of host publication	Gallium Nitride Materials and Devices VII
DOIs	https://doi.org/10.1117/12.909633
State	Published - 2012
Externally published	Yes
Event	Gallium Nitride Materials and Devices VII - San Francisco, CA, United States Duration: Jan 23 2012 → Jan 26 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8262
ISSN (Print)	0277-786X

Other

Other	Gallium Nitride Materials and Devices VII
Country/Territory	United States
City	San Francisco, CA
Period	01/23/12 → 01/26/12

Keywords

Carrier leakage
Efficiency droop
III-Nitride
InGaN QWs
Light-emitting diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Applied Mathematics
Electrical and Electronic Engineering
Computer Science Applications

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10.1117/12.909633

Cite this

@inproceedings{cb3502c0bb8244c3ba3d473bb740b597,

title = "Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion",

abstract = "The MOCVD growths and device characteristics of 500-nm emitting InGaN quantum well (QW) light-emitting diodes (LEDs) with the insertion of thin (~1 nm) AlInN barrier layers were investigated for efficiency droop suppression. Preliminary device characteristics of InGaN QW LEDs with thin AlInN barrier layers were also presented.",

keywords = "Carrier leakage, Efficiency droop, III-Nitride, InGaN QWs, Light-emitting diodes",

author = "Guangyu Liu and Jing Zhang and Hongping Zhao and Nelson Tansu",

year = "2012",

doi = "10.1117/12.909633",

language = "English (US)",

isbn = "9780819489050",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Gallium Nitride Materials and Devices VII",

note = "Gallium Nitride Materials and Devices VII ; Conference date: 23-01-2012 Through 26-01-2012",

}

Liu, G, Zhang, J, Zhao, H & Tansu, N 2012, Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion. in Gallium Nitride Materials and Devices VII., 82621F, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8262, Gallium Nitride Materials and Devices VII, San Francisco, CA, United States, 01/23/12. https://doi.org/10.1117/12.909633

Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion. / Liu, Guangyu; Zhang, Jing; Zhao, Hongping et al.
Gallium Nitride Materials and Devices VII. 2012. 82621F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8262).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

AU - Liu, Guangyu

AU - Zhang, Jing

AU - Zhao, Hongping

AU - Tansu, Nelson

PY - 2012

Y1 - 2012

N2 - The MOCVD growths and device characteristics of 500-nm emitting InGaN quantum well (QW) light-emitting diodes (LEDs) with the insertion of thin (~1 nm) AlInN barrier layers were investigated for efficiency droop suppression. Preliminary device characteristics of InGaN QW LEDs with thin AlInN barrier layers were also presented.

AB - The MOCVD growths and device characteristics of 500-nm emitting InGaN quantum well (QW) light-emitting diodes (LEDs) with the insertion of thin (~1 nm) AlInN barrier layers were investigated for efficiency droop suppression. Preliminary device characteristics of InGaN QW LEDs with thin AlInN barrier layers were also presented.

KW - Carrier leakage

KW - Efficiency droop

KW - III-Nitride

KW - InGaN QWs

KW - Light-emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=84859609414&partnerID=8YFLogxK

U2 - 10.1117/12.909633

DO - 10.1117/12.909633

M3 - Conference contribution

AN - SCOPUS:84859609414

SN - 9780819489050

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices VII

T2 - Gallium Nitride Materials and Devices VII

Y2 - 23 January 2012 through 26 January 2012

ER -

Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

Abstract

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Keywords

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